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Ferroelectric Switchable Topological Magnon Hall Effect in Type-I Multiferroics

Quanchao Du, Jinlian Lu, Xueqing Wan, Zhenlong Zhang, Zhijun Jiang

Abstract

Electric control of magnetism at room temperature is crucial for developing next-generation, low-power spintronic devices. However, the intrinsic incompatibility between ferroelectricity and magnetism in crystal symmetry, along with the absence of strong magnetoelectric coupling mechanisms, continues to pose major challenges. In this work, we propose a general theoretical framework for magnon manipulation based on ferroelectric polarization switching in two-dimensional multiferroics. Taking monolayer multiferroics $\mbox{Ti}_{2}\mbox{F}_{3}$ as an example, our calculations demonstrate that ferroelectric switching can significantly modulate spin exchanges, thereby enabling nonvolatile and reversible electric control of the magnons. More importantly, the ferroelectric polarization reversal leads to a sign change in the Berry curvature, ensuring effective control over the valley Hall and nonlinear Hall response of magnons. This study provides a new way for realizing low-power and electrically controllable magnonic devices.

Ferroelectric Switchable Topological Magnon Hall Effect in Type-I Multiferroics

Abstract

Electric control of magnetism at room temperature is crucial for developing next-generation, low-power spintronic devices. However, the intrinsic incompatibility between ferroelectricity and magnetism in crystal symmetry, along with the absence of strong magnetoelectric coupling mechanisms, continues to pose major challenges. In this work, we propose a general theoretical framework for magnon manipulation based on ferroelectric polarization switching in two-dimensional multiferroics. Taking monolayer multiferroics as an example, our calculations demonstrate that ferroelectric switching can significantly modulate spin exchanges, thereby enabling nonvolatile and reversible electric control of the magnons. More importantly, the ferroelectric polarization reversal leads to a sign change in the Berry curvature, ensuring effective control over the valley Hall and nonlinear Hall response of magnons. This study provides a new way for realizing low-power and electrically controllable magnonic devices.

Paper Structure

This paper contains 10 equations, 4 figures.

Figures (4)

  • Figure 1: (a) The side view of the monolayer $\mathrm{Ti_2F_3}$ showing different out-of-plane polarization $\mathrm{P}$ configuration, labeled as FE-up and FE-dn, respectively. (b) Magnon bands of $\mathrm{Ti_2F_3}$ weighted by the Berry curvature $\Omega^z$ for FE-up (left) and FE-dn (right) states. Switching the polarization from $+ \mathrm{P}$ to $- \mathrm{P}$ reverses the sign of $\Omega^z$.
  • Figure 2: (a) Top view of the monolayer $\mathrm{Ti_2F_3}$ structure with labeling the spin exchanges. Here, light and dark blue ions refer to the $\mathrm{Ti}_{t}$ and $\mathrm{Ti}_{o}$, respectively. (b) Temperature dependence of the net magnetization $\mathrm{Ti_2F_3}$ obtained from MC simulations. (c) The FE switching barrier of monolayer $\hbox{Ti}_{2}\hbox{F}_{3}$. (d) The band structure of the monolayer $\hbox{Ti}_{2}\hbox{F}_{3}$.
  • Figure 3: (a) The schematic of the magnon valley Hall effect. (b) The Berry curvature of the major magnon band with FE-up (left) and FE-dn (right) state. (c) The temperature dependence of the magnon valley Hall conductivity ${\kappa}^{xy}_{v}$. (d) The schematic of the magnon orbital Hall effect. (e) The orbital magnetic moment of the major magnon band with FE-up (left) and FE-dn (right) state. (f) The temperature dependence of the magnon orbital Hall conductivity ${\kappa}^{xy}_{o}$.
  • Figure 4: (a) The extended BCD of the major band with FE-up and FE-dn state. (b) The schematic illustration of the magnon nonlinear Hall effect. (c) The calculated temperature dependence of the magnon nonlinear Hall conductivity ${I}^{y}_{n}$. The left and right panels illustrate the reversal behavior induced by ferroelectric polarization switching and strain modulation, respectively.