Topological transition induced by selective random defects on a honeycomb lattice
Sogen Ikegami, Kiyu Fukui, Shun Okumura, Yasuyuki Kato, Yukitoshi Motome
TL;DR
This work investigates how selective random defects mediate the spectral and topological evolution of electrons on a honeycomb lattice as it interpolates to the 1/6-depleted Bishamon-kikko (BK) lattice, using the Haldane model with a staggered potential $M_i$, nearest-neighbor hopping $t_1$, next-nearest-neighbor hopping $t_2$, and a complex phase $\phi$. By defining a defect ratio $r \in [0,1]$, the authors interpolate between the pristine honeycomb ($r=0$) and the BK lattice ($r=1$) and analyze spectral gaps, edge states, and topological invariants. They identify two regimes: (i) a smooth connection where the topological character (e.g., Chern numbers) remains intact across $0\le r \le 1$, and (ii) a defect-induced topological transition at particular parameter sets where a gap closes around $E\approx 0.3$ and topological markers jump near $r \approx 0.7$. To interpret the transition, they introduce an effective model on the honeycomb lattice that mimics defects as hopping-amplitude modulations $\alpha_{ij}$, finding qualitative agreement and a proposed mapping $\alpha \simeq 1 - r$ with the transition occurring near $\alpha \approx 0.3$. The results demonstrate lattice engineering as a viable approach to tailor spectral and topological properties across materials, with potential realizations in vdW materials, graphene-based systems, photonic crystals, and MOFs.
Abstract
We investigate how the spectral and topological properties of electron systems evolve on a lattice that interpolates between the honeycomb and its 1/6-depleted structures through the introduction of selective random defects. We find that in certain parameter regimes, the topological properties of the two lattice systems are smoothly connected, whereas in other regimes, selective random defects induce a topological transition. Analysis based on an effective model reveals that the effect of selective random defects can be understood as a modulation of hopping amplitudes. Our results highlight the potential for designing and controlling the spectral and even topological properties of electronic systems across a wide range of material platforms.
