Variable-temperature attenuator calibration method for on-wafer microwave noise characterization of low-noise amplifiers
Anthony J. Ardizzi, Jiayin Zhang, Akim A. Babenko, Kieran A. Cleary, Austin J. Minnich
TL;DR
The paper addresses the challenge of accurately measuring cryogenic noise temperatures of on-wafer low-noise microwave devices, where input losses and temperature gradients introduce large uncertainties. It introduces a variable-temperature attenuator calibration based on Y-factor measurements and S-parameters, deriving a mismatch-corrected Y-factor and demonstrating how attenuators at two physical temperatures can extract the input and backend noise terms $T_\text{in}^\text{c}$, $T_\text{in}^\text{h}$, and $T_{50}^\text{BE}$ for a two-port DUT. The method is validated with electromagnetic simulations and experimentally on InP HEMTs in the 4–8 GHz range, showing good agreement with prior measurements and highlighting practical considerations such as attenuator heating and impedance mismatches. The technique offers a pathway to more robust, impedance-aware noise characterization with potential extension to broader temperature ranges via on-chip, temperature-controlled attenuators, benefiting quantum computing and radio-astronomy instrumentation.
Abstract
Low-noise cryogenic microwave amplifiers are widely used in applications such as radio astronomy and quantum computing. On-wafer noise characterization of cryogenic low-noise transistors is desirable because it facilitates more rapid characterization of devices prior to packaging, but obtaining accurate noise measurements is difficult due to the uncertainty arising from the input loss and temperature gradients prior to the device-under-test (DUT). Here, we report a calibration method that enables the simultaneous determination of the backend noise temperature and effective-noise-ratio at the input plane of the DUT. The method is based on measuring the S-parameters and noise power of a series of attenuators at two or more distinct physical temperatures. We validate our method by measuring the noise temperature of InP HEMTs in 4-8 GHz. The calibration method can be generalized to measure the microwave noise temperature of any two-port device so long as a series of attenuators can be measured at two or more distinct physical temperatures.
