Attosecond-resolved coherent control of zone-folded acoustic phonons in silicon carbide
Hiromu Matsumoto, Tsukasa Maruhashi, Yosuke Kayanuma, Yadong Han, Jianbo Hu, Kazutaka G. Nakamura
TL;DR
The paper demonstrates attosecond-scale coherent control of zone-folded acoustic phonons in 4H-SiC by using a pair of phase-locked femtosecond pulses to coherently excite the FTA mode at ~6 THz and measure its dynamics via transient reflectivity. A density-matrix ISRS framework with two electronic levels describes the generation and interference of electronic and phonon pathways under off-resonant excitation, providing an analytic form for the coherent-control signal. The key result is a verified analytical expression for the phonon amplitude a) ⟨Q(t)⟩ ∝ sin(ωt − ωτ/2 + θ) with b) Q0 depending on pulse delay τ and phase, which explains the observed enhancement and suppression patterns. This work demonstrates attosecond-precision phonon control in a wide-bandgap semiconductor, with implications for ultrafast phononics and coherent manipulation of lattice dynamics in devices.
Abstract
Zone-folded acoustic phonons (6 THz) in 4H silicon carbide (SiC) have been coherently excited using a femtosecond near-infrared pulse and measured through transient reflectivity with a pump and probe protocol. Their amplitude is coherently controlled with 300-attoseconds precision and the results show interference fringe patterns due to electronic and phonon interference. The results are well reproduced by a model calculation with two electronic and phonon levels and an impulsive stimulated Raman process. Using the model, we obtain the analytical form of the coherent control scheme at an off-resonant condition.
