Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices
Lorenzo Lazzari, Jérémie Schuhmann, Othmane Meskine, Martina Morassi, Aristide Lemaître, Maria I. Amanti, Frédéric Boeuf, Fabrice Raineri, Florent Baboux, Sara Ducci
TL;DR
This work addresses the need for bright, tunable biphoton sources on a scalable platform by integrating a III–V AlGaAs SPDC source with a silicon photonic chip. The authors demonstrate a heterogeneously integrated hybrid device employing a multimode evanescent taper to achieve high brightness and on-chip JSA engineering, quantified by a PGR above $10^{6}$ s$^{-1}$ mW$^{-1}$ and CAR up to $6\times10^{2}$, and validate a predictive model that links the coupling geometry to both amplitude and phase of the JSA. The model, grounded in device transmissions $T_u(\omega)$, $T_v(\omega)$ and phase shifts $\vartheta(\omega)$, is confirmed by HOM interferometry and used to explore advanced capabilities such as on-chip emulation of exchange statistics (including anyonic-like phases) and metrological enhancements via tailored JSA. Overall, the work establishes a compact, on-chip quantum photonic platform where amplitude and phase of biphoton states are engineered through inter-material coupling, paving the way for scalable quantum communication, computation, and precision sensing with hybrid materials. $PGR > $ $10^{6}$ s$^{-1}$ mW$^{-1}$ and CAR up to $6\times 10^{2}$ underscore the practical advantage of the approach, while the potential for inverse design and on-chip phase engineering signals broad applicability in future quantum technologies.
Abstract
Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimode evanescent coupling scheme. This design achieves a pair generation rate above 10$^{6}$ s$^{-1}$mW$^{-1}$ and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.
