Thin gap approximations for microfluidic device design
Lingyun Ding, Terry Wang, Marcus Roper
TL;DR
The paper addresses efficient modeling of thin-gap microfluidic flows where classical Hele-Shaw theory omits inertia and boundary layers. It introduces a modified Method of Weighted Residuals to derive a 2D model by expanding the vertical velocity profile in a Gegenbauer basis and deriving an optimal closure parameter $a$, yielding a refined 2D Darcy–Brinkman–type equation that matches 3D simulations for both Stokes and finite-$\mathrm{Re}$ flows. The authors validate the model on Poiseuille and coaxial geometries and in centrifuge-on-a-chip devices, showing relative errors below roughly $12\%$ and accurate prediction of interface shapes and separation bubbles. This framework enables rapid device design and can be extended to higher-order corrections and other fields.
Abstract
Over 125 years ago, Henry Selby Hele-Shaw realized that the depth-averaged flow in thin gap geometries can be closely approximated by two-dimensional (2D) potential flow, in a surprising marriage between the theories of viscous-dominated and inviscid flows. Hele-Shaw flows allow visualization of potential flows over 2D airfoils and also undergird important discoveries in the dynamics of interfacial instabilities and convection, yet they have found little use in modeling flows in microfluidic devices, although these devices often have thin gap geometries. Here, we derive a Hele-Shaw approximation for the flow in the kinds of thin gap geometries created within microfluidic devices. Although these equations have been reported before, prior work used a less direct derivation. Here, we obtain them via a modified Method of Weighted Residuals (MWR), interpreting the Hele-Shaw approximation as the leading term of an orthogonal polynomial expansion that can be systematically extended to higher-order corrections. We provide substantial numerical evidence showing that approximate equations can successfully model real microfluidic and inertial-microfluidic device geometries. By reducing three-dimensional (3D) flows to 2D models, our validated model will allow for accelerated device modeling and design.
