Intercalation induced quasi-freestanding layer in TiSe$_2$
Turgut Yilmaz, Yi Sheng Ng, Anil Rajapitamahuni, Asish Kundu, Hui-Qiong Wang, Jin-Cheng Zheng, Elio Vescovo
TL;DR
The paper investigates how potassium intercalation into TiSe2 affects its electronic structure, using μ-ARPES and core-level spectroscopy to track changes upon room-temperature deposition. It reports a conduction-band splitting into two branches, with the energy separation reaching approximately 130 meV at 40 K. Photon-energy dependent ARPES reveals one branch with two-dimensional character and the other with three-dimensional bulk dispersion, indicating the formation of a quasi-freestanding TiSe2 layer with K impurities occupying the top vdW gap. DFT calculations comparing monolayer and bulk TiSe2 support the experimental observations and show a lattice expansion along the c-axis leading to a 2D-3D crossover; PLD is suppressed upon intercalation. The study demonstrates dimensional control of 1T-TiSe2 via intercalation, offering a route to explore low-temperature phenomena like superconductivity.
Abstract
Angle-resolved photoemission spectroscopy is employed to study the electronic structure of bulk TiSe2 before and after doping with potassium impurities. A splitting in the conduction band into two branches is observed after room-temperature deposition. The splitting energy increases to approximately 130 meV when the sample is cooled to 40 K. One branch exhibits a non-dispersive two-dimensional feature, while other one shows the characteristics of three dimensional bulk band dispersion. Core level spectroscopy suggests that the K impurities predominantly occupy the intercalated sites within the van derWaals gap. The results indicate the formation of a quasi-freestandingTiSe2 layer. Additionally, doping completely suppresses the periodic lattice distortion in the surface region. These findings are further supported by density functional theory calculations, which compare the band structure of monolayer and bulk TiSe2 with experimental data. Thus, the dimensional and intrinsic electronic properties of 1T-TiSe2 can be controlled through the intercalation procedure used in this work.
