Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
A. R. Khisameeva, A. Shuvaev, I. M. Moiseenko, P. A. Gusikhin, A. S. Astrakhantseva, A. Pimenov, D. A. Svintsov, I. V. Kukushkin, V. M. Muravev
Abstract
We experimentally investigate the terahertz spectrum of plasma excitations in a plasmonic crystal based on AlGaN/GaN two-dimensional electron system (2DES). While screened plasmon modes with linear dispersion are readily observed in the plasmonic crystals, the existence of unscreened modes localized in the slots between the gates has remained unobserved until now. We discover this slot plasma excitation exhibiting square-root dispersion. It turned out that these slot plasmons follow an unconventional wave-vector quantization rule, $q_u=(N + 1/4) \times π/l_u$ for even integers $N$, and require the condition for excitation $q_u h \ll 1$, where $h$ is the gate-to-2DES distance and $l_u$ is the slot width. We develop an analytical model that accurately captures the found dispersion and relaxation, revealing a non-trivial $-π/4$ phase shift upon plasmon reflection at the gate edge. Experiments demonstrate that the slot plasmons persist up to room temperature, thereby enabling a broad range of opportunities for the advancement of plasmonic devices.
