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Niobium's intrinsic coherence length and penetration depth revisited using low-energy muon spin spectroscopy

Ryan M. L. McFadden, Jonathan W. Angle, Eric M. Lechner, Michael J. Kelley, Charles E. Reece, Matthew A. Coble, Thomas Prokscha, Zaher Salman, Andreas Suter, Tobias Junginger

Abstract

We report measurements of the London penetration depth ($λ_L$) and Bardeen-Cooper-Schrieffer (BCS) coherence length ($ξ_0$) in oxygen-doped niobium, with impurity concentrations spanning the "clean" to "dirty" limits. Depth-resolved low-energy muon spin spectroscopy (LE-$μ$SR) was used to quantify the element's Meissner screening profiles, analyzed within a framework that accounts for nonlocal electrodynamics. The analysis indicates intrinsic length scales of $λ_L = 29.1(10)$ nm and $ξ_0 = 39.9(25)$ nm, corresponding to a Ginzburg-Landau (GL) parameter of $κ= 0.70(5)$. The obtained $λ_L$ and $κ$ value are smaller than values commonly used in applications and modeling, indicating that clean niobium lies at the boundary between type-I and type-II superconductivity, supporting the contemporary view that its intrinsic state may be type-I.

Niobium's intrinsic coherence length and penetration depth revisited using low-energy muon spin spectroscopy

Abstract

We report measurements of the London penetration depth () and Bardeen-Cooper-Schrieffer (BCS) coherence length () in oxygen-doped niobium, with impurity concentrations spanning the "clean" to "dirty" limits. Depth-resolved low-energy muon spin spectroscopy (LE-SR) was used to quantify the element's Meissner screening profiles, analyzed within a framework that accounts for nonlocal electrodynamics. The analysis indicates intrinsic length scales of nm and nm, corresponding to a Ginzburg-Landau (GL) parameter of . The obtained and value are smaller than values commonly used in applications and modeling, indicating that clean niobium lies at the boundary between type-I and type-II superconductivity, supporting the contemporary view that its intrinsic state may be type-I.

Paper Structure

This paper contains 12 equations, 3 figures, 2 tables.

Figures (3)

  • Figure 1: Typical data in Nb (sample Nb-SR18). In the normal state, the $\mu^{+}$ asymmetry $A(t)$ is weakly damped with a spin-precession rate that is independent of implantation energy $E$. By contrast, the damping of $A(t)$ in the Meissner state is strong, increasing with increasing $E$, which is accompanied by a decrease in the rate of spin-precession. The solid colored lines denote fits to a model approximating the field distribution as a sum of Gaussians (described in the text and Supporting Material sm). The $\mu^{+}$ implantation profile $\rho(z, E)$ and mean stopping depth $\langle z \rangle$, simulated using the TRIM.SP Monte Carlo code 1991-Eckstein-SSMS-10trimsp, are shown in the inset for each $E$.
  • Figure 2: Meissner screening profiles in each Nb sample, derived from a "staged" analysis of the data. Here, the mean magnetic field $\langle B \rangle$ is plotted as a function of $\mu^{+}$ implantation energy $E$ (with the corresponding mean stopping depth $\langle z \rangle$ also indicated) in both the normal and Meissner states. Differences in screening capacity are visually evident, with each sample's oxygen impurity concentration $[\ch{O}]$ and electron mean-free-path $\ell$ (derived from ) indicated in each panel. The solid and dotted colored lines represent a global fit of the "staged" data to the nonlocal model for the screening profile $B(z)$ convolved with the $\mu^{+}$ stopping distribution $\rho(z,E)$ (described in the text). For comparison, the dashed colored lines show similar fits assuming $B(z)$ is governed by local electrodynamics.
  • Figure 3: Dependence of the (effective) magnetic penetration depth at 0, determined the "staged" analysis approach in the local limit, on the electron mean-free-path $\ell$. The solid coloured line denotes a best fit to \ref{['eq:lambda-impurity']}, with corresponding values for the London penetration depth $\lambda_{L}$ and the Pippard/ coherence length indicated in the plot.