Monochromatic Electron Emission from Graphene-Insulator-Semiconductor-Structured Electron Source Utilizing Interference Efficets
Takao Koichi, Shogo Kawashima, Hiroshi Miyake, Satoshi Abo, Fujio Wakaya, Masayoshi Nagao, Katsuhisa Murakami
TL;DR
The paper analyzes monochromatic electron emission from graphene-insulator-semiconductor (GIS) sources by numerically propagating electron wave packets through mono- and multilayer graphene. It identifies interlayer interference as a key factor that broadens energy distributions at certain energies (notably $E_0=13.4$ eV) and shows that first-order diffraction in monolayer graphene can yield narrow energy spreads when combined with angular confinement via a small aperture, achieving about $\Delta E \approx 0.22$ eV. Multilayer graphene further improves monochromaticity by effectively acting as an angular aperture, reducing the energy spread without external apertures as the number of layers increases. The results suggest a viable route to highly monochromatic GIS electron sources and motivate experimental validation with realistic parameters such as $\theta \approx 73^\circ$ and $\Delta E$ in the few-tenths of an eV range.
Abstract
The graphene-insulator-semiconductor-structured electron source has garnered significant attention due to its high electron emission efficiency and highly monochromatic electron emission. Graphene, with its c-axis orientation and well-defined interlayer spacing, exhibits electron interference effects that can influence the properties of emitted electrons. In this work, motion of an electron wave packet is numerically calculated to discuss the energy spread of the zero-order and first-order diffracted electron waves by mono- and multilayer graphene. It is found that the effects of multiple reflections of electron between the layers broaden the energy spread especially for the incident energy of 13.4 eV, and that highly monochromatic electron emission can be achieved by using diffracted electron wave with a small aperture.
