Effects of strain on the stability of the metallic rutile and insulating M1 phases of vanadium dioxide
Peter Mlkvik, Lena Geistlich, Nicola A. Spaldin, Claude Ederer
TL;DR
This work presents a systematic first-principles analysis of how strain biases the relative stability of VO$_2$'s rutile R phase and monoclinic M1 phase. Using a $1\times2\times2$ orthorhombic supercell within DFT+$V$ (with $V=2$ eV) and Wannier-based extraction of hopping parameters, it maps how epitaxial strain along the $c$-axis and in the basal plane modifies V–V dimerization, orbital occupations, and the Peierls-like energy gain. The key finding is that $c$-axis strain dominantly controls phase stability, with a softening lattice stiffness along the dimerization direction offsetting changes in hopping, while basal-plane strain primarily influences stability through Poisson-driven changes in $c$. These results provide a quantitative framework for strain-engineering VO$_2$ MIT and reconcile diverse experimental observations across substrate orientations.
Abstract
We present a systematic density-functional theory study of the effects of strain on the structural and electronic properties in vanadium dioxide (VO$_2$), with particular emphasis on its effect on the relative stability of the metallic rutile and the insulating monoclinic M1 phases. We consider various strain conditions that can be related to epitaxial strain present in VO$_2$ films grown on different lattice planes. Our calculations confirm the dominant role of $c$ axis strain, i.e., along the direction of the V-V dimerization in the M1 phase. Our analysis suggests that this effect stems primarily from the weakening of the lattice stiffness, with the hopping along the $c$ axis playing a minor role. We also confirm that, in strain scenarios that deform the basal plane, the $c$ axis strain still has a dominant effect on the phase stability.
