Spin Hall effect in the high-resistivity high-entropy alloy AlCrMoW
Jyoti Yadav, Felix Janus, Tiago de Oliveira Schneider, Shalini Sharma, Daniel Schröter, Markus Meinert
TL;DR
This work addresses how to achieve large spin Hall effects in high-resistivity materials by studying Al$_x$(CrMoW)$_{1-x}$ high-entropy alloy thin films. The authors synthesize, pattern, and extensively characterize these films on Ta seeds, using harmonic Hall measurements and broadband FMR, complemented by SPR-KKR density functional theory calculations to extract and compare the spin Hall conductivity $\sigma_\mathrm{SH}$ and spin Hall angle $\theta_\mathrm{SH}$ across compositions. They find a maximum $\theta_\mathrm{SH} = -0.12 \pm 0.01$ at $x \approx 0.25$ with $\sigma_\mathrm{SH} \approx -72{,}000\ \hbar/(2e)\ \mathrm{S/m}$, and a resistivity peak near $x = 0.5$ of about $180\ \mu\Omega\mathrm{cm}$; experiments align well with intrinsic SHC predictions, with vertex corrections playing a minor role. The results show that HEAs containing a main-group element can form simple crystal structures while delivering high resistivity and sizeable SHE, offering a scalable route for spin Hall device engineering.
Abstract
We study thin films of the high-entropy alloy system Al$_{x}$(CrMoW)$_{1-x}$, grown on Ta seed layers by magnetron co-sputtering. Between $x=0.2$ and $x=0.6$, a resistivity larger than 100$μΩ$cm is achieved, with a peak of 180$μΩ$cm at $x=0.5$. Around the stoichiometric composition AlCrMoW, the alloy forms a bcc solid solution. The harmonic Hall method was used to characterize the spin Hall angle of the alloy series, where a maximum spin Hall angle of $θ= -0.12 \pm 0.01$ is observed for $x=0.25$. The implied spin Hall conductivity is $σ_\mathrm{SH} \approx -72\,000 \, \hbar/(2e)$\,S/m. The experimental results show excellent agreement with density functional theory calculations, which show similar trends and values. The results demonstrate that high-entropy alloys with a main-group element component can form a simple crystal structure and show high resistivity. This suggests that a whole new class of materials for spin Hall device engineering is available with simple methods.
