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Systematic cRPA study of two-dimensional MA$_2$Z$_4$ materials: From unconventional screening to correlation-driven instabilities

F. Bagherpour, Y. Yekta, H. Hadipour, E. Sasioglu, A. Khademi, S. A. Jafari, I. Mertig, S. Lounis

Abstract

Understanding the interplay between screening, electronic correlations, and collective excitations is essential for the design of two-dimensional quantum materials. Here, we present a comprehensive first-principles study of more than 60 MA$_2$Z$_4$ monolayers, encompassing semiconducting, metallic, cold-metallic, magnetic, and topological phases. Using the constrained random phase approximation (cRPA), we compute material-specific effective Coulomb interaction parameters $U$, $U'$, and $J$, including their spatial dependence across distinct correlated subspaces defined by local coordination and crystal symmetry. In semiconducting compounds, long-range nonlocal interactions persist, revealing unconventional screening and suggesting strong excitonic effects beyond simple dielectric models. In cold-metallic systems, sizable long-range Coulomb interactions remain despite the presence of free carriers, highlighting their atypical metallic screening. Among 33-valence-electron compounds, we find $U_{\mathrm{eff}} > W$ in the $β_2$ phase, indicating proximity to charge-density-wave or Mott instabilities. Several V- and Nb-based systems exhibit intermediate-to-strong correlation strength, with $U/W > 1 $ in multiple cases. Using cRPA-derived Stoner parameters, we identify magnetic instabilities in various V-, Nb-, Cr-, and Mn-based compounds. Finally, selected cold-metallic systems display plasmon dispersions that deviate from the conventional $\sqrt{q}$ behavior, revealing nearly non-dispersive low-energy modes. These results position MA$_2$Z$_4$ monolayers as a versatile platform for investigating correlation-driven instabilities and emergent collective behavior in two dimensions.

Systematic cRPA study of two-dimensional MA$_2$Z$_4$ materials: From unconventional screening to correlation-driven instabilities

Abstract

Understanding the interplay between screening, electronic correlations, and collective excitations is essential for the design of two-dimensional quantum materials. Here, we present a comprehensive first-principles study of more than 60 MAZ monolayers, encompassing semiconducting, metallic, cold-metallic, magnetic, and topological phases. Using the constrained random phase approximation (cRPA), we compute material-specific effective Coulomb interaction parameters , , and , including their spatial dependence across distinct correlated subspaces defined by local coordination and crystal symmetry. In semiconducting compounds, long-range nonlocal interactions persist, revealing unconventional screening and suggesting strong excitonic effects beyond simple dielectric models. In cold-metallic systems, sizable long-range Coulomb interactions remain despite the presence of free carriers, highlighting their atypical metallic screening. Among 33-valence-electron compounds, we find in the phase, indicating proximity to charge-density-wave or Mott instabilities. Several V- and Nb-based systems exhibit intermediate-to-strong correlation strength, with in multiple cases. Using cRPA-derived Stoner parameters, we identify magnetic instabilities in various V-, Nb-, Cr-, and Mn-based compounds. Finally, selected cold-metallic systems display plasmon dispersions that deviate from the conventional behavior, revealing nearly non-dispersive low-energy modes. These results position MAZ monolayers as a versatile platform for investigating correlation-driven instabilities and emergent collective behavior in two dimensions.

Paper Structure

This paper contains 12 sections, 6 equations, 5 figures, 5 tables.

Figures (5)

  • Figure 1: Side and top views of the two-dimensional crystal structure of intercalated architecture MA$_2$Z$_4$ in (a) $\alpha_1$ structure, (b) $\alpha_2$ structure, (c) $\beta_1$ structure, (d) $\beta_2$ structure, (e) $\beta_5$ structure, and (f) Star-of-David (SOD) reconstructed $\beta_2$ crystal structure. Dark gray, white, and blue spheres denote M, A, and Z atoms, respectively.
  • Figure 2: Electronic structure and maximally localized Wannier functions (MLWFs) for representative MA$_2$Z$_4$ compounds. Panels (a)--(f) show the projected DFT-PBE band structures of $\alpha_1$-TaSi$_2$N$_4$, $\alpha_1$-TaSi$_2$P$_4$, $\beta_2$-CrGe$_2$N$_4$, $\alpha_1$-MoSi$_2$N$_4$, $\beta_5$-MnBi$_2$Te$_4$, and $\beta_2$-HgGa$_2$Se$_4$. Panels (g)--(l) compare the original DFT-PBE bands (gray) with the Wannier-interpolated bands (cyan) for three different correlated subspaces. Panels (m)--(r) display the spatial distributions of selected MLWFs used in the construction of these subspaces. Left column: $d_{z^2}$-like MLWF (one-orbital model). Middle column: $d_{xy}$-like MLWF from a three-orbital subspace ($d_{z^2}$ + $d_{xy}$ + $d_{x^2-y^2}$). Right column: $d_{x^2-y^2}$-like MLWF from the full $d$-manifold. For the topological compound $\beta_2$-HgGa$_2$Te$_4$, the relevant subspaces consist of $p_x$+$p_y$, $s$ + $p_x$+$p_y$, and $s$ + $p$ orbitals.
  • Figure 3: On-site intra-orbital Coulomb interaction parameters — bare interaction $V$, partially screened interaction $U$, and fully screened interaction $\tilde{U}$ — for 2D MA$_2$Z$_4$ compounds with 32, 33, 34, and 41 valence electrons. Results are shown for different correlated subspaces, enabling comparison of the strength and screening of electronic interactions across a wide range of chemical compositions and electronic configurations. The abbreviation VEC refers to valence electron count.
  • Figure 4: Real-space decay of the intra-orbital Coulomb interaction for selected MA$_2$Z$_4$ compounds with 34 and 33 valence electrons. Shown are the bare interaction $V(r)$ (solid lines), the partially screened interaction $U(r)$, and the fully screened interaction $\tilde{U}(r)$ as functions of distance $r$, expressed in units of the in-plane lattice constant $a$. All results correspond to the $d_{z^2}$+$d_{xy}$+$d_{x^2-y^2}$ (or $d_{z^2}$+$e_g$) correlated subspace. Panels (a)--(d) present 34-valence-electron compounds: (a) displays $V(r)$, $U(r)$, and $\tilde{U}(r)$ for $\alpha_1$-MoSi$_2$N$_4$ up to $r = 6a$; (b) extends this analysis to $r = 20a$ and includes power-law fits, where $U(r) \sim r^{-\alpha}$ and $\tilde{U}(r) \sim r^{-\beta}$ with $\alpha = 0.6$ and $\beta = 0.55$, respectively; (c) shows the analogous decay for $\alpha_1$-WSi$_2$N$_4$ up to $r = 20a$, exhibiting a similar slow screening behavior without fitted exponents; (d) presents $\beta_2$-CrGe$_2$N$_4$ up to $r = 9a$, where the faster decay of $\tilde{U}(r)$ reflects stronger metallic screening. Panels (e)--(h) extend the analysis to 33-valence-electron compounds: (e) and (f) show the decay of $V(r)$, $U(r)$, and $\tilde{U}(r)$ up to $r=12a$ for $\alpha_1$- and $\beta_2$-NbGe$_2$N$_4$, respectively; (g) and (h) present the corresponding results for $\alpha_1$- and $\beta_2$-TaSi$_2$N$_4$ up to $r=12a$.
  • Figure 5: Plasmonic properties of selected 33-valence-electron MA$_2$Z$_4$ cold metallic compounds. Panels (a) and (b) show the calculated electron energy loss spectra $L(\mathbf{q},\omega)$ for wavevectors along the $\Gamma$--M direction in (a) $\alpha_1$-TaSi$_2$N$_4$ and (b) $\beta_2$-TaSi$_2$N$_4$. Plasmon dispersion relations extracted from the peak positions in $L(\mathbf{q},\omega)$ are plotted in (c)--(f) for four representative materials: (c) $\alpha_1$-TaSi$_2$N$_4$, (d) $\alpha_1$-NbSi$_2$N$_4$, (e) $\alpha_1$-NbGe$_2$N$_4$, and (f) $\beta_2$-TaSi$_2$N$_4$. The results show pronounced deviations from conventional $\sqrt{q}$ plasmon dispersion, including linear and negative-slope regimes characteristic of cold-metal band structures.