Charge-localization-driven metal-insulator phase transition in layered molecular conductors
Savita Priya, Maxim Wenzel, Olga Iakutkina, Marvin Schmidt, Christian Prange, Dieter Schweitzer, Yohei Saito, Reizo Kato, Koichi Hiraki, Martin Dressel
TL;DR
This study addresses the driving mechanism of metal-insulator transitions in Se-substituted α-(BEDT-TTF)2I3 salts by combining transport measurements, broadband infrared spectroscopy, vibrational analysis, and DFT calculations. It shows that α-(STF)2I3 and α-(BETS)2I3 undergo MITs without evidence of charge ordering, instead displaying low-energy absorption and carrier localization driven by strong electron–phonon coupling, with gaps that shrink under Se substitution. The work contrasts these results with the charge-order–driven MIT in the parent α-(ET)2I3 and proposes a phase diagram that highlights a transition from correlation-driven charge order to phonon-mediated charge localization under chemical pressure. Overall, the findings reveal a distinct MIT mechanism controlled by electron–phonon interactions in Se-substituted layered molecular conductors and suggest strategies to tune ground states via chemical substitution and strain.
Abstract
The organic conductor $α$-(BEDT-TTF)$_2$I$_3$ provides the prime example of a charge-order-driven metal-insulator transition. Restricted chemical substitution of S atoms by Se in the constituent molecules allows us to modify the electronic properties. This not only decreases the transition temperature but, in addition, alters the phase transition mechanism, resulting in the ground state deviating from the charge-ordered insulator state of the parent compound. Employing infrared optical spectroscopy, we investigate changes in the charge dynamics. Furthermore, we demonstrate the absence of charge ordering in the Se-substituted materials and suggest that the phase transition is instead driven by the localization of the itinerant charge carriers due to strong electron-phonon interactions.
