Local structural disorder in crystalline materials
Marios Zacharias, Jacky Even
TL;DR
This Perspective addresses local positional disorder in soft, anharmonic materials, challenging conventional monomorphous crystalline models in predicting electronic, vibrational, and transport properties. It advocates polymorphous and anharmonic frameworks to explicitly account for local symmetry breaking and to recalibrate electron-phonon interactions and phonon dynamics. The authors review and synthesize methods such as ASDM, SCP, TDEP, SSCHA, and related approaches, showing that including local disorder yields band-gap openings, strongly overdamped phonon spectra, and substantial band-gap renormalization with temperature. They propose integrating these frameworks with first-principles simulations and machine-learning force fields to enable predictive modeling for energy materials, while outlining current limitations and a roadmap for future experimental–theoretical validation.
Abstract
Local positional disorder in soft, anharmonic materials has emerged as a central factor in shaping their electronic, vibrational, optical, and transport properties. Viewed mainly as a source of performance degradation, recent theoretical insights reveal that local disorder profoundly influences the electronic structure and phonon dynamics, without inducing deep electronic traps or non-radiative recombination pathways. In this work, we highlight advances in modeling local disorder using polymorphous and anharmonic frameworks, showing how these methods explain experimental observations and predict new trends. We emphasize the role of disorder in the breakdown of the phonon quasiparticle picture and in modulating electron-phonon and phonon-phonon interactions, particularly in soft, anharmonic phases of matter, with significant effects on electrical and thermal transport. We outline opportunities for integrating these insights into predictive modeling for energy materials and propose combining advanced first-principles methods with machine learning.
