The Group-IV-Vacancy Color Center in Diamond
Fenglei Gu
TL;DR
The work provides a refined, self-consistent theoretical framework for Group-IV vacancy centers in diamond, unifying intrinsic interactions (spin-orbit coupling and electron-phonon coupling) with external controls (strain, electric, light, and magnetic fields) to enable predictable quantum behavior. It derives the electronic hole orbitals from the six X–C bonds, clarifies the four energy manifolds and their ordering, and formulates a two-mode electron-phonon coupling in the hole basis, complemented by a central-field spin-orbit term with material-dependent λ_X. A key novelty is the joint-reflection symmetry, which explains degeneracies under transverse magnetic fields and links strain to orbital spin dynamics, offering a route to strain sensing and Stark-shift predictions. The framework reconciles prior modeling discrepancies (Hepp, Thiering, Meesala) by refining the quench-factor approach and providing analytic and numerical tools for spectra, transitions, and external-field responses, thereby advancing the engineering of XV centers for quantum information processing.
Abstract
Group-IV vacancy (G4V, or XV, where X = Si, Ge, Sn, Pb) color centers constitute a novel and promising class of defects in diamonds. This chapter reviews and refines the theoretical models for the XV systems, encompassing the intrinsic interactions, including spin-orbit coupling and electron-phonon interactions, and the external interactions involving strain, electric, light, and magnetic fields. Based on the refined model, we predict their properties, explain the experimental data, and suggest follow-up experiments. This article established a solid foundation for controlling the XV system, thus paving the way for quantum information processing.
