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Beyond Germanides: Anomalous Hall Effect in the Silicide LaMn2Si2

S. V. Streltsov, D. M. Korotin

TL;DR

The paper investigates the anomalous Hall effect in the silicide family $RMn_2Si_2$, focusing on the noncollinear LaMn_2Si_2 with a magnetic space group $Im'm2'$. Using first-principles calculations with spin-orbit coupling and Wannier-based Kubo formalism, it predicts a substantial intrinsic AH conductivity $\sigma^{AH}_{xy} \approx -365$ S/cm, with much smaller off-diagonal components. Symmetry considerations show that this material should host a finite AH response, and electron doping by about 0.4 electrons per formula unit can enhance $|\sigma^{AH}_{xy}|$ toward about 650 S/cm, indicating tunability. The work highlights silicides with the $ThCr_2Si_2$ structure as platforms for anomalous Hall transport and related spintronic phenomena, and suggests further exploration of similar materials and potential topological features in quasi-2D limits.

Abstract

By combining symmetry analysis and direct density functional calculations including the spin-orbit coupling, we demonstrate that anomalous Hall effect can be observed in not only germanides with general formula RMn$_2$Ge$_2$, where $R$ is a rare-earth ion or Y. Our calculations predict a large anomalous Hall conductivity in LaMn$_2$Si$_2$, with a non-zero $σ_{xy}^{AH}$ component of $-360~\text{S/cm}$, accompanied by a pronounced magneto-optical response. Remarkably, electron doping of LaMn$_2$Si$_2$ is expected to substantially enhance the Hall conductivity, with values reaching up to -650 S/cm. These results suggest that silicides with general formula RM$_2$Si$_2$ can be an interesting platform for studying anomalous Hall effect.

Beyond Germanides: Anomalous Hall Effect in the Silicide LaMn2Si2

TL;DR

The paper investigates the anomalous Hall effect in the silicide family , focusing on the noncollinear LaMn_2Si_2 with a magnetic space group . Using first-principles calculations with spin-orbit coupling and Wannier-based Kubo formalism, it predicts a substantial intrinsic AH conductivity S/cm, with much smaller off-diagonal components. Symmetry considerations show that this material should host a finite AH response, and electron doping by about 0.4 electrons per formula unit can enhance toward about 650 S/cm, indicating tunability. The work highlights silicides with the structure as platforms for anomalous Hall transport and related spintronic phenomena, and suggests further exploration of similar materials and potential topological features in quasi-2D limits.

Abstract

By combining symmetry analysis and direct density functional calculations including the spin-orbit coupling, we demonstrate that anomalous Hall effect can be observed in not only germanides with general formula RMnGe, where is a rare-earth ion or Y. Our calculations predict a large anomalous Hall conductivity in LaMnSi, with a non-zero component of , accompanied by a pronounced magneto-optical response. Remarkably, electron doping of LaMnSi is expected to substantially enhance the Hall conductivity, with values reaching up to -650 S/cm. These results suggest that silicides with general formula RMSi can be an interesting platform for studying anomalous Hall effect.

Paper Structure

This paper contains 7 sections, 4 equations, 6 figures.

Figures (6)

  • Figure 1: Crystal and magnetic structure of LaMn$_2$Si$_2$. Figure was plotted using VESTA VESTA.
  • Figure 2: Band structure as obtained in GGA and GGA+SOC calculations (a). Berry curvature $\Omega_{xy}$ along high-symmetry directions (b). The Fermi energy is at zero. Blue dashed lines show points along chosen path contributing the most to $\Omega_{xy} ({\bf k})$.
  • Figure 3: GGA+SOC electronic band structure of LaMn$_2$Si$_2$ with $x$ projection of spin shown by color. The Fermi energy is set to zero. Inset shows k-points used for the band plotting.
  • Figure 4: Total density of states (DOS) as obtained in GGA+SOC calculations. The Fermi energy is set to zero.
  • Figure 5: Intrinsic anomalous Hall conductivity $\sigma^{AH}_{xy}$ as function of the Fermi energy variation. Zero $\delta E_F$ corresponds to the actual Fermi level in LaMn$_2$Si$_2$.
  • ...and 1 more figures