Characterization of drive-induced unwanted state transitions in superconducting circuits
W. Dai, S. Hazra, D. K. Weiss, P. D. Kurilovich, T. Connolly, H. K. Babla, S. Singh, V. R. Joshi, A. Z. Ding, P. D. Parakh, J. Venkatraman, X. Xiao, L. Frunzio, M. H. Devoret
TL;DR
The paper addresses drive-induced unwanted state transitions (DUST) in fixed-frequency superconducting qubits, introducing a three-mechanism taxonomy (A: ac-Stark-induced TLS exchange, B: intrinsic multi-photon transitions, C: inelastic scattering with spurious modes). It combines time-resolved pump-probe spectroscopy, Floquet steady-state simulations, and electromagnetic environment modeling to classify observed transitions and predict their conditions. The authors demonstrate that most transitions are explainable by either TLS coupling, intrinsic transmon dynamics, or coupling to parasitic RF modes, and show how to mitigate them via drive-frequency selection and improved circuit design. The work provides a systematic framework and diagnostic toolkit for anticipating and avoiding DUST in superconducting circuits, with implications for high-fidelity quantum control and readout across architectures.
Abstract
Microwave drives are essential for implementing control and readout operations in superconducting quantum circuits. However, increasing the drive strength eventually leads to unwanted state transitions which limit the speed and fidelity of such operations. In this work, we systematically investigate such transitions in a fixed-frequency qubit subjected to microwave drives spanning a 9 GHz frequency range. We identify the physical origins of these transitions and classify them into three categories. (1) Resonant energy exchange with parasitic two-level systems, activated by drive-induced ac-Stark shifts, (2) multi-photon transitions to non-computational states, intrinsic to the circuit Hamiltonian, and (3) inelastic scattering processes in which the drive causes a state transition in the superconducting circuit, while transferring excess energy to a spurious electromagnetic mode or two-level system (TLS) material defect. We show that the Floquet steady-state simulation, complemented by an electromagnetic simulation of the physical device, accurately predicts the observed transitions that do not involve TLS. Our results provide a comprehensive classification of these transitions and offer mitigation strategies through informed choices of drive frequency as well as improved circuit design.
