Roughening Transition in Quantum Circuits
Hyunsoo Ha, David A. Huse, Grace M. Sommers
TL;DR
This work examines a randomness driven roughening transition of the entanglement membrane in a (3+1)-dimensional Clifford circuit, revealing how disorder competes with lattice pinning to shape entanglement growth. By introducing a hyperdiamond circuit architecture and leveraging ZX calculus, the authors diagnose the transition through tilt-induced changes in the entanglement entropy across bipartitions, and develop a scaling theory that captures smooth, rough, and tilted regimes. Finite-size numerics yield a correlation-length exponent ν ≈ 1.5 and a critical tilt exponent θc ≈ 1.3, consistent with FRG predictions and previous numerical work, while providing a first direct numerical estimate of θc in this setting. The results elucidate high-dimensional entanglement dynamics with translationally invariant geometries and have implications for robust quantum memories and scalable quantum simulations in higher dimensions.
Abstract
We explore a roughening phase transition that occurs in the entanglement dynamics of certain quantum circuits. Viewing entanglement as the free energy of a membrane in a circuit-defined random environment, there is a competition between membrane smoothing due to lattice pinning and roughening due to disorder in the circuit. In particular, we investigate the randomness-induced roughening transition of the entanglement membrane in a (3+1)-dimensional Clifford circuit model, by calculating the entanglement entropy for various bipartitions. We further construct a scaling theory for membranes tilted away from lattice planes, uncovering new scaling forms and a crossover to a previously unexplored critical "tilted regime".
