Complex Band Structure and localisation transition for tridiagonal non-Hermitian k-Toeplitz operators with defects
Yannick De Bruijn, Erik Orvehed Hiltunen
TL;DR
The paper introduces the complex band structure for tridiagonal $k$-Toeplitz operators as a quantitative alternative to winding-based diagnostics, enabling explicit decay bounds for eigenvectors through $oldsymbol{\varepsilon}$-pseudoeigenvectors. By treating the symbol $f$ and complex Floquet parameters $(\alpha,\beta)$, it derives the open-limit spectrum $\boldsymbol{\sigma_{open}}$ and characterises eigenvectors in the open and winding regions, including edge- and bulk-localised states. This framework is then applied to subwavelength non-Hermitian resonator chains via the gauge capacitance matrix, revealing skin-to-bulk localisation transitions and defect-mode formation, with decay rates determined by the complex band structure (e.g., $\beta=\tfrac{1}{2}\log\prod b_i/c_i$ and $r=\tfrac{1}{2}\log\prod b_i/c_i$). The theory is extended to finite chains, monomer and polymer configurations, and a non-Hermitian tight-binding Hamiltonian, demonstrating broad applicability to photonic/phononic metamaterials and quantum-style lattice models; all numerical data and code are publicly available. The results provide precise, computable predictions for localisation lengths and defect-induced modes, offering a unified lens on non-Hermitian localisation phenomena across discrete and continuum settings.
Abstract
Using the Bloch-Floquet theory, we propose an innovative technique to obtain the eigenvectors of tridiagonal k-Toeplitz operators. This method offers a more extensive and quantitative basis for describing localised eigenvectors beyond the non-trivial winding zone, yielding sharp decay bounds. The validity of our results is confirmed numerically in one-dimensional resonator chains, showcasing non-Hermitian skin localisation, bulk localisation, and tunnelling effects. We conclude the paper by analysing non-Hermitian tight binding Hamiltonians, illustrating the broad applicability of the complex band structure.
