Dominant orbital magnetization in the prototypical altermagnet MnTe
Chao Chen Ye, Karma Tenzin, Jagoda Sławińska, Carmine Autieri
TL;DR
This work investigates the prototypical altermagnet α-MnTe using density functional theory to quantify both spin and orbital magnetizations. The authors demonstrate that, despite a large intrinsic band gap, a substantial orbital magnetization of about $-0.176$ μ_B per unit cell dominates the net magnetization, while the spin contribution is minuscule with $M^{spin}_z o 0.002$ μ_B per unit cell and a minute spin canting angle of about $0.01^ ext{°}$. The orbital magnetization remains robust over a wide energy window and is largely insensitive to hole doping, highlighting the importance of orbital effects in altermagnets and pointing toward orbital-based phenomena and orbitronics in these materials. The findings also emphasize that the experimentally observed net magnetization can be reduced by domain compensation, underscoring the need to include orbital contributions for a complete description of altermagnetic systems and their potential device applications.
Abstract
Altermagnetism is an unconventional form of antiferromagnetism characterized by momentum-dependent spin polarization of electronic states and zero net magnetization, arising from specific crystalline symmetries. In the presence of spin-orbit coupling (SOC) and broken time-reversal symmetry, altermagnets can exhibit finite net magnetization and anomalous Hall effect (AHE), phenomena typically associated with ferromagnets. Due to the dependence of AHE on magnetization, understanding the interplay between spin and orbital contributions to magnetization is essential for interpreting experiments and designing altermagnetic devices. In this work, we use density functional theory to investigate the intrinsic spin and orbital magnetization of the magnetic ground state of the prototypical altermagnet α-MnTe. We find that SOC induces weak ferromagnetism through spin canting, accompanied by a slight in-plane rotation of the Néel vector. Notably, we identify a significant net orbital magnetization of 0.176 μB per unit cell oriented along the z-axis, while the spin magnetization in the same direction is much smaller at 0.002 μB. By varying the chemical potential, we show that the spin magnetization is tunable through hole doping, whereas the orbital magnetization remains robust against carrier density changes. These results highlight the important role of orbital magnetization and establish its relevance for orbital-based phenomena in altermagnets.
