Inferring charge-noise source locations from correlations in spin qubits
Juan S. Rojas-Arias, Akito Noiri, Jun Yoneda, Peter Stano, Takashi Nakajima, Kenta Takeda, Takashi Kobayashi, Giordano Scappucci, Seigo Tarucha, Daniel Loss
TL;DR
This work addresses the spatial localization of charge noise sources that limit spin-qubit devices. By analyzing cross-power spectral densities among two exchange-coupled qubits in isotopically purified Si/Si-Ge, the authors show that low-frequency noise is dominated by a small number of charge TLFs and demonstrate a triangulation method that uses cross-PSDs to infer TLF locations, validated by two experimentally identified TLFs with distinct switching times. They extend the approach to two-dimensional tilings and discuss extensions to larger qubit arrays and other qubit encodings, creating a general framework for pinpointing noise sources in scalable quantum processors. The findings have practical impact for noise mitigation and device engineering by enabling diagnostic localization of microscopic defects that degrade qubit performance.
Abstract
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.
