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Simulation of radiation damage effect on silicon detectors using RASER

Xingchen Li, Chenxi Fu, Hui Li, Zhan Li, Lin Zhu, Congcong Wang, Xiyuan Zhang, Weimin Song, Hui Liang, Cong Liu, Hongbo Wang, Xin Shi, Suyu Xiao

Abstract

Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence environment, which can significantly affect their performance. It is important to understand the electrical behavior of detectors after irradiation. In this study, an irradiation simulation framework is constructed in RASER to simulate leakage current and charge collection effciency. The defect parameters are obtained from the Hamburg penta trap model (HPTM). Based on this work, we predict the similar silicon inner tracker which under a ten-year CEPC Higgs mode run can still maintain over 90% charge collection efficiency.

Simulation of radiation damage effect on silicon detectors using RASER

Abstract

Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence environment, which can significantly affect their performance. It is important to understand the electrical behavior of detectors after irradiation. In this study, an irradiation simulation framework is constructed in RASER to simulate leakage current and charge collection effciency. The defect parameters are obtained from the Hamburg penta trap model (HPTM). Based on this work, we predict the similar silicon inner tracker which under a ten-year CEPC Higgs mode run can still maintain over 90% charge collection efficiency.
Paper Structure (5 sections, 7 figures, 1 table)

This paper contains 5 sections, 7 figures, 1 table.

Table of Contents

  1. Introduction
  2. Simulation process
  3. Simulation results
  4. Irradiation prediction in CEPC
  5. Conclusion

Figures (7)

  • Figure 1: (a) IV results and (b) CCE results comparison between simulations and data without irradiation
  • Figure 2: IV results comparisons between data and simulation at (a) $\rm1\times 10^{15}\ n_{eq}/cm^2$ and (b) $\rm1.6\times 10^{15}\ n_{eq}/cm^2$ fluences
  • Figure 3: Simulation results of electrical field distribution with different fluences at 700 V
  • Figure 4: Simulation results of trapping time with different fluences
  • Figure 5: Simulation of induced current waveform with non-irradiation and $\rm1.6\times 10^{15}\ n_{eq}/cm^2$ fluence at 500 V
  • ...and 2 more figures