Mitigation of exchange cross-talk in dense quantum dot arrays
Daniel Jirovec, Pablo Cova Fariña, Stefano Reale, Stefan D. Oosterhout, Xin Zhang, Sander de Snoo, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen
TL;DR
This work tackles the challenge of cross-talk in dense spin-qubit gate architectures by introducing a direct method to characterize barrier-to-barrier cross-talk on exchange interactions in a Ge/SiGe 2×4 quantum-dot array. The core approach tracks the singlet-triplet ($ST^-$) avoided crossing to extract a barrier cross-talk matrix, enabling a two-layer virtualization that orthogonally controls exchange couplings via virtual barrier gates. Validation in three four-spin chains demonstrates that the extracted cross-talk coefficients largely predict dynamics when nearest-neighbor exchanges are on, confirming the method’s applicability to longer spin chains and automated tuning. The results provide design guidance for scalable, multi-qubit quantum simulators and identify regimes where nonlinear cross-talk or leakage pose challenges, outlining paths toward even more robust cross-talk compensation in dense quantum-dot devices.
Abstract
Coupled spins in semiconductor quantum dots are a versatile platform for quantum computing and simulations of complex many-body phenomena. However, on the path of scale-up, cross-talk from densely packed electrodes poses a severe challenge. While cross-talk onto the dot potentials is nowadays routinely compensated for, cross-talk on the exchange interaction is much more difficult to tackle because it is not always directly measurable. Here we propose and implement a way of characterizing and compensating cross-talk on adjacent exchange interactions by following the singlet-triplet avoided crossing in Ge. We show that we can easily identify the barrier-to-barrier cross-talk element without knowledge of the particular exchange value in a 2x4 quantum dot array. We uncover striking differences among these cross-talk elements which can be linked to the geometry of the device and the barrier gate fan-out. We validate the methodology by tuning up four-spin Heisenberg chains. The same methodology should be applicable to longer chains of spins and to other semiconductor platforms in which mixing of the singlet and the lowest-energy triplet is present or can be engineered. Additionally, this procedure is well suited for automated tuning routines as we obtain a stand-out feature that can be easily tracked and directly returns the magnitude of the cross-talk.
