On Overlap Ratio in Defocused Electron Ptychography
Amirafshar Moshtaghpour, Angus I. Kirkland
TL;DR
This work analyzes how the overlap ratio between adjacent illuminated regions in defocused-probe 4D STEM affects electron ptychography (EP) reconstruction quality. It introduces a geometry-driven framework with recovery-agnostic redundancy metrics and a best-case EP scenario, alongside a Constrained PIE algorithm that leverages a phase-object constraint with a known probe. Through simulations, the study shows that a $40\%$ overlap yields stable, high-quality reconstructions comparable to higher overlaps, with problem difficulty depending on the object; this provides practical guidance for designing 4D STEM acquisitions to balance redundancy, resolution, and dose. The findings offer a principled approach to predict EP performance from scan geometry alone and inform experimental planning in EP applications to complex materials and biological specimens.
Abstract
Four-dimensional Scanning Transmission Electron Microscopy (4D STEM) with data acquired using a defocused electron probe is a promising tool for characterising complex biological specimens and materials through a phase retrieval process known as Electron Ptychography (EP). The efficacy of 4D STEM acquisition and the resulting quality of EP reconstruction depends on the overlap ratio of adjacent illuminated areas. This paper demonstrates how the overlap ratio impacts the data redundancy and the quality of the EP reconstruction. We define two quantities as a function of the overlap ratio that are independent of both the object and the EP algorithm. Subsequently, we evaluate an EP algorithm for varying overlap ratios using simulated 4D STEM datasets. Notably, a 40% or greater overlap ratio yields stable, high-quality reconstructions.
