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The Mottness and the Anderson localization in bilayer nickelate La$_3$Ni$_2$O$_{7-δ}$

Yuxin Wang, Ziyan Chen, Yi Zhang, Kun Jiang, Jiangping Hu

TL;DR

The study addresses how apical-oxygen vacancies in La$_3$Ni$_2$O$_{7-\delta}$ control Mottness and drive Anderson localization, thereby suppressing superconductivity. It develops a bilayer two-orbital tight-binding model for the doped regime ($x=1$) anchored to DFT, uses DMFT to identify a Mott transition in the correlated bilayer, and then treats disorder as a binary mixture of metallic and Mott-insulating states within DCA/TMDCA, supplemented by a Hubbard-I self-energy and BEB formalism. The analysis reveals an Anderson localization transition at $x_c\approx0.4$ ($\delta_c\approx0.2$) that accompanies vacancy-induced insulating behavior, consistent with experiments, and shows that disorder near the superconducting dome can suppress superconductivity via localization. An independent KPM-based check with a band-insulator proxy corroborates the localization threshold, underscoring the crucial role of oxygen stoichiometry in nickelate superconductors and guiding interpretations of recent experimental findings.

Abstract

The oxygen content plays a pivotal role in determining the electronic and superconducting properties of the recently discovered La$_3$Ni$_2$O$_{7-δ}$ superconductors. In this work, we investigate the impact of oxygen vacancies on the insulating behavior of La$_3$Ni$_2$O$_{7-δ}$ across the doping range $δ= 0$ to $0.5$. At $δ= 0.5$, we construct a bilayer two-orbital Hubbard model to describe the system. Using dynamical mean-field theory, we demonstrate that the model captures the characteristics of a bilayer Mott insulator. To explore the effects of disorder within the range $δ= 0$ to $0.5$, we treat the system as a mixture of metallic and Mott insulating phases. By applying the dynamical cluster approximation and the typical medium dynamical cluster approximation, we identify an Anderson localization transition at a critical doping of $δ\sim 0.2$ through the geometric average of the local density of states. This Anderson localization transition is the key reason for the suppression of superconductivity in La$_3$Ni$_2$O$_{7-δ}$. These results provide a quantitative explanation of recent experimental observations and highlight the critical influence of oxygen content on the physical properties of La$_3$Ni$_2$O$_{7-δ}$.

The Mottness and the Anderson localization in bilayer nickelate La$_3$Ni$_2$O$_{7-δ}$

TL;DR

The study addresses how apical-oxygen vacancies in LaNiO control Mottness and drive Anderson localization, thereby suppressing superconductivity. It develops a bilayer two-orbital tight-binding model for the doped regime () anchored to DFT, uses DMFT to identify a Mott transition in the correlated bilayer, and then treats disorder as a binary mixture of metallic and Mott-insulating states within DCA/TMDCA, supplemented by a Hubbard-I self-energy and BEB formalism. The analysis reveals an Anderson localization transition at () that accompanies vacancy-induced insulating behavior, consistent with experiments, and shows that disorder near the superconducting dome can suppress superconductivity via localization. An independent KPM-based check with a band-insulator proxy corroborates the localization threshold, underscoring the crucial role of oxygen stoichiometry in nickelate superconductors and guiding interpretations of recent experimental findings.

Abstract

The oxygen content plays a pivotal role in determining the electronic and superconducting properties of the recently discovered LaNiO superconductors. In this work, we investigate the impact of oxygen vacancies on the insulating behavior of LaNiO across the doping range to . At , we construct a bilayer two-orbital Hubbard model to describe the system. Using dynamical mean-field theory, we demonstrate that the model captures the characteristics of a bilayer Mott insulator. To explore the effects of disorder within the range to , we treat the system as a mixture of metallic and Mott insulating phases. By applying the dynamical cluster approximation and the typical medium dynamical cluster approximation, we identify an Anderson localization transition at a critical doping of through the geometric average of the local density of states. This Anderson localization transition is the key reason for the suppression of superconductivity in LaNiO. These results provide a quantitative explanation of recent experimental observations and highlight the critical influence of oxygen content on the physical properties of LaNiO.
Paper Structure (6 sections, 14 equations, 7 figures, 3 tables)

This paper contains 6 sections, 14 equations, 7 figures, 3 tables.

Figures (7)

  • Figure 1: The phase diagram of La$_3$Ni$_2$O$_{7-\delta}$ in the region of $\delta=0-0.5$. The variable $x$ represents the additional filling in the $e_g$ orbitals of Ni introduced by the creation of O vacancies in La$_3$Ni$_2$O$_{7-\delta}$, with $x=2\delta$ due to the chemical valence of O is O$^{2-}$. The crystal field splitting is also shown here and the $d_{x^2-y^2}$ orbital is exactly half-filled at $x=1$. We also plot the enlarged bilayer Ni-O octahedral structure for large $x$, in which the corner shared apical pink ball can be regarded as 0.5 oxygen for $x=1$ in VCA. The content of apical oxygen vacancies has a significant impact on superconductivity. The $t$/$b$ indicates the layer index.
  • Figure 2: (a) The band structure from DFT calculation. The red and green dots represent the orbital projections of $d_{x^2-y^2}$ and $d_{z^2}$, respectively. (b) The comparison between the DFT calculation (blue lines) and bilayer two-orbital TB model (red lines). We can see the TB bands fit the $e_{g}$ bands very well around the Fermi level.
  • Figure 3: (a) The spectral functions $A(\omega)$ for $x=1$ obtained from DMFT calculation based on 4-band model are shown for $U=2$ eV, 4 eV and 5.3 eV, respectively. The $A(\omega)$ gradually evolves from a metallic state into a Mott insulator state, with the clear development of a Mott gap at $U=5.3$ eV. (b) The quasi-particle weight $Z$ at the Fermi level. The Mott transition occurs around $U=5.3$ eV, consistent with the figure (a).
  • Figure 4: (a) The density of states of the pure Mott-insulating state obtained by introducing a Hubbard-I self-energy $\Sigma_H(\omega)$ to the La$_3$Ni$_2$O$_{6.5}$ bilayer two-orbital model. (b-d) Comparison of ADOS calculated by DCA and TDOS calculated by TMDCA with various concentration of the Mott states x$_{Mott}$ = 0.2, 0.3, 0.4. Both the DCA and TMDCA calculation use cluster size of $N_c=100$ and 2560 independent disordered realization. The Fermi level is determined by integrating the ADOS according to the doping induced by x$_{Mott}$ and is shifted to zero in all plots.
  • Figure S1: (a) The band structure from DFT calculation. (b) The comparison between the first-principles calculation and bilayer single-orbital model. We can see the wannier bands fit the $d_{x^2-y^2}$ bands very well around the Fermi level.
  • ...and 2 more figures