Table of Contents
Fetching ...

Extrinsic Mechanisms of Phonon Magnetic Moment

Rui Xue, Zhenhua Qiao, Yang Gao, Qian Niu

Abstract

We develop a general formalism of phonon magnetic moment by including the relaxation process. We then identify the skew-scattering and side-jump contributions to the phonon magnetic moment originating from the non-adiabaticity, both of which are related to the nonlocal phonon Berry curvature and are in close analogy to those in the electronic Hall effect. All contributions of the phonon magnetic moment are exemplified in a honeycomb lattice, showing that the extrinsic contribution can be as important as the intrinsic one and that the resulting phonon angular momentum varies significantly across the Brillouin zone. Our work offers a systematic framework of the phonon chirality and paves the way of tuning the phonon magnetic moment through the non-adiabaticity.

Extrinsic Mechanisms of Phonon Magnetic Moment

Abstract

We develop a general formalism of phonon magnetic moment by including the relaxation process. We then identify the skew-scattering and side-jump contributions to the phonon magnetic moment originating from the non-adiabaticity, both of which are related to the nonlocal phonon Berry curvature and are in close analogy to those in the electronic Hall effect. All contributions of the phonon magnetic moment are exemplified in a honeycomb lattice, showing that the extrinsic contribution can be as important as the intrinsic one and that the resulting phonon angular momentum varies significantly across the Brillouin zone. Our work offers a systematic framework of the phonon chirality and paves the way of tuning the phonon magnetic moment through the non-adiabaticity.
Paper Structure (10 equations, 2 figures)

This paper contains 10 equations, 2 figures.

Figures (2)

  • Figure 1: Extrinsic contributions to the phonon magnetic moment. (a) Skew-scattering mechanism. (b) Side-jump Mechanism.
  • Figure 2: Adiabatic and non-adiabatic contributions to the phonon magnetic moment.(a) The isoenergy surface of electronic valence band; (b) $\lambda_{ij}^{A}$ and $\lambda_{ij}^{NA}$ along the high symmetry lines of the phonon Brillouin zone with $\eta_{p}=0.04$ eV, $\eta_{c}=0.04$ eV, $\eta_{v}=0.04$ eV. (c) The skew-scattering and side-jump contribution in $\lambda_{ij}^{NA}$ along the high symmetry lines of the phonon Brillouin zone with the same parameter of (b), (c) the inset displays that an electron state near $K$ can be scattered to a energy degenerate state near $K^{'}$ by a phonon with momentum $K$, vice versa. (d)-(g) The adiabatic term $\lambda_{ij}^{A}$ and non-adiabatic term $\lambda_{ij}^{NA}$ for the highest phonon band in phonon Brillouin zone for (d) $\eta_{p}=0.02$ eV, $\eta_{c}=0.002$ eV, $\eta_{v}=0.004$ eV; (e) $\eta_{p}=0.02$ eV, $\eta_{c}=0.02$ eV, $\eta_{v}=0.004$ eV; (f) $\eta_{p}=0.02$ eV, $\eta_{c}=0.004$ eV, $\eta_{v}=0.02$ eV; (g) $\eta_{p}=0.004$ eV, $\eta_{c}=0.02$ eV, $\eta_{v}=0.04$ eV, respectively. (h) The angular momentum of phonon in phonon Brillouin zone with the same parameter of (f).