Hole burning experiments and modeling in erbium-doped silica glass fibers down to millikelvin temperatures: evidence for ultra-long population storage
Mahdi Bornadel, Sara Shafiei Alavijeh, Farhad Rasekh, Nasser Gohari Kamel, Faezeh Kimiaee Asadi, Erhan Saglamyurek, Daniel Oblak, Christoph Simon
TL;DR
This work uses spectral hole burning to study spin dynamics of Er$^{3+}$ in Er-doped silica fibers over $T\approx$7 mK–2.4 K and up to $B\approx$0.2 T, revealing two relaxation components at higher temperatures and a third ultra-long-lived component ($T_c$) that yields lifetimes $>\!9$ h near 7 mK. A unified model decomposes $1/T_i$ into three additive mechanisms—Er-Er flip-flop, direct coupling to thermally driven TLS, and Raman-type processes—with shared temperature and field dependencies but component-specific amplitudes $\alpha^i$. The exponents and parameters are fitted to data, showing a transition from Lorentzian to Gaussian spectral holes and a notable emergence of the long-lived ion class, likely linked to isotope/nuclear-spin effects, suggesting EDFs as robust long-term quantum memory candidates. The findings indicate that optimizing the ESR environment and isotope composition could enable stable, long-duration quantum state storage in amorphous Er-doped fibers, with implications for quantum communication networks.
Abstract
We use spectral hole burning to investigate spin dynamics within the electronic Zeeman sublevels of the ground state of the erbium ions in erbium-doped fibers (EDF). Conducted at ultra-low temperatures and under varying magnetic fields, our study reveals distinct changes in spin relaxation dynamics across different conditions. We identified three decay components at approximately 7 mK, with one achieving spin lifetimes of over 9 hours under optimal conditions, while two components were observed at higher temperatures. The fairly stable relative weights of the decay components across conditions suggest distinct ion populations contributing to the observed relaxation dynamics. While earlier studies struggled to account for all decay components at higher temperatures, our approach successfully models spin dynamics across all observed decay components, using a consistent set of underlying mechanisms, including spin flip-flop interactions, direct coupling to two-level systems, and Raman-type processes, and distinguishes the decay components by the strengths with which these mechanisms contribute. These results suggest EDFs' potential as a promising candidate for quantum memory applications, with further room for optimization.
