Current Fluctuations in One-Dimensional Diffusion-Reaction Systems via Tensor Networks
Jiayin Gu
TL;DR
The paper develops a tensor-network framework to compute the cumulant generating function $Q(\lambda)$ of current statistics in a 1D diffusion-reaction system with holes and electrons in a semiconducting material. It represents the state distribution as a matrix product state (MPS) and the tilted generator as a matrix product operator (MPO), and uses DMRG to extract the leading eigenvalue that yields $Q(\lambda)$. The results confirm Gallavotti–Cohen symmetry and show that activating the reaction between carriers damps current fluctuations, establishing an upper bound $\tfrac{2D}{J} \le \coth(A/2)$ under symmetric boundary conditions, with equality in the purely diffusive limit. The study demonstrates the power of tensor-network methods for nonequilibrium classical stochastic systems and outlines natural extensions to more complex geometries and rate laws.
Abstract
Tensor networks are employed to characterize the current fluctuations in one-dimensional diffusion-reaction systems. The representative system under study is a semiconducting material where holes and electrons constitute two types of charge carriers. These holes and electrons diffuse in the system with the reactions of pair-generation and -recombination occurring between them. The system is driven by imbalanced conditions imposed at two boundaries. The large deviation function encoding the full counting statistics of electric current is numerically calculated using the density matrix renormalization group. The fluctuation theorem is shown to hold for the current. Moreover, by comparing the cases where the reactions are turned on or off, it is revealed that the reactions have a damping effect on current fluctuations. This indicates an interesting inequality, suggesting that current fluctuations are upper bounded.
