Inverse Melting of Polar Order in Chemically Substituted BaTiO3
Yang Zhang, Suk Hyun Sung, Colin B. Clement, Sang-Wook Cheong, Ismail El Baggari
TL;DR
The paper reports inverse melting of polar order in a chemically doped ferroelectric oxide BaTiO3, focusing on BaZr0.2Ti0.8O3 (BZTO) using in situ aberration-corrected STEM to map atomic-scale polarization. They observe a sequence where high-temperature thermal fluctuations give way to increased local order at intermediate temperatures, followed by a re-entrant disordered state at low temperature, i.e., inverse melting driven by dopant-induced randomness. A minimal 2D spin-1 random-field Ising model with $P_i \in \{0, \pm 1\}$ and Hamiltonian $H = -J \\sum_{\\langle ij \\rangle} P_i P_j - \\sum_i h_i P_i$, with $J>0$, captures the mechanism: dopant-generated random fields $h_i$ create a rough energy landscape that pins local polarization and induces low-temperature disorder. Atomic-scale maps of polar displacement angles $\\phi(\\mathbf{r})$, their standard deviation $\\sigma_{\\phi}$, and autocorrelation $A[\\phi(\\mathbf{r})]$ reveal non-monotonic ordering with temperature, and the Fourier-based diffuse intensity and $g(r)$ analysis indicate inhomogeneous strain and disorder in the low-temperature phase. The results suggest the inverse-melting phenomenon may be general to chemically doped ferroelectrics and could enable tunable thermal expansion and electrocaloric responses through controlled disorder.
Abstract
In many condensed matter systems, long range order emerges at low temperatures as thermal fluctuations subside. In the presence of competing interactions or quenched disorder, however, some systems can show unusual configurations that become more disordered at low temperature, a rare phenomenon known as "inverse melting". Here, we discover an inverse melting of the polar order in a ferroelectric oxide with quenched chemical disorder (BaTi1-xZrxO3) through direct atomicscale visualization using in situ scanning transmission electron microscopy. In contrast to the clean BaTiO3 parent system in which long range order tracks lower temperatures, we observe in the doped system BaTi1-xZrxO3 that thermally driven fluctuations at high temperature give way to a more ordered state and then to a re-entrant disordered configuration at even lower temperature. Such an inverse melting of the polar order is likely linked to the random field generated by Zr dopants, which modulates the energy landscape arising from the competition between thermal fluctuations and random field pinning potential. These visualizations highlight a rich landscape of order and disorder in materials with quenched disorder, which may be key to understanding their advanced functionalities.
