Measuring Hall voltage and Hall resistance in an atom-based quantum simulator
T. -W. Zhou, T. Beller, G. Masini, J. Parravicini, G. Cappellini, C. Repellin, T. Giamarchi, J. Catani, M. Filippone, L. Fallani
TL;DR
The paper reports a direct measurement of the Hall voltage and Hall resistance in a neutral-atom quantum simulator, using ultracold fermions in synthetic Hall-bars formed by ladder geometries with a synthetic magnetic flux. By quenching longitudinal and transverse fields and tuning a compensating transverse field to set the transverse polarization to zero, the authors extract the Hall voltage and demonstrate a universal 1/n scaling of the Hall resistance, $\rho_{ m H} = \frac{2}{n}\tan\left(\frac{\varphi}{2}\right)$, across two- and three-leg ladders in the strongly interacting, single-band metal regime. The results agree with mean-field and numerical simulations and show robustness against microscopic details, bridging analogue quantum simulations with solid-state Hall measurements. This establishes a versatile platform to study Hall transport in strongly correlated systems and paves the way toward exploring quantum Hall physics and topological transport with ultracold atoms.
Abstract
In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems.
