Table of Contents
Fetching ...

Terahertz control of surface topology probed with subatomic resolution

Vedran Jelic, Stefanie Adams, Daniel Maldonado-Lopez, Ismail A. Buliyaminu, Mohamed Hassan, Jose L. Mendoza-Cortes, Tyler L. Cocker

Abstract

Light-induced phase transitions offer a method to dynamically modulate topological states in bulk complex materials. Yet, next-generation devices demand nanoscale architectures with contact resistances near the quantum limit and precise control over local electronic properties. The layered material WTe$_2$ has gained attention as a likely Weyl semimetal, with topologically protected linear electronic band crossings hosting massless chiral fermions. Here, we demonstrate a topological phase transition facilitated by light-induced shear motion of a single atomic layer at the surface of bulk WTe$_2$, thereby opening the door to nanoscale device concepts. Ultrafast terahertz fields enhanced at the apex of an atomically sharp tip resonantly couple to the key interlayer shear mode of WTe$_2$ via a ferroelectric dipole at the interface, inducing a structural phase transition at the surface to a metastable state. Subatomically resolved differential imaging, combined with hybrid-level density functional theory, reveals a shift of 7 $\pm$ 3 picometres in the top atomic plane. Tunnelling spectroscopy links electronic changes across the phase transition with the electron and hole pockets in the band structure, suggesting a reversible, light-induced annihilation of the topologically-protected Fermi arc surface states in the top atomic layer.

Terahertz control of surface topology probed with subatomic resolution

Abstract

Light-induced phase transitions offer a method to dynamically modulate topological states in bulk complex materials. Yet, next-generation devices demand nanoscale architectures with contact resistances near the quantum limit and precise control over local electronic properties. The layered material WTe has gained attention as a likely Weyl semimetal, with topologically protected linear electronic band crossings hosting massless chiral fermions. Here, we demonstrate a topological phase transition facilitated by light-induced shear motion of a single atomic layer at the surface of bulk WTe, thereby opening the door to nanoscale device concepts. Ultrafast terahertz fields enhanced at the apex of an atomically sharp tip resonantly couple to the key interlayer shear mode of WTe via a ferroelectric dipole at the interface, inducing a structural phase transition at the surface to a metastable state. Subatomically resolved differential imaging, combined with hybrid-level density functional theory, reveals a shift of 7 3 picometres in the top atomic plane. Tunnelling spectroscopy links electronic changes across the phase transition with the electron and hole pockets in the band structure, suggesting a reversible, light-induced annihilation of the topologically-protected Fermi arc surface states in the top atomic layer.

Paper Structure

This paper contains 20 sections, 17 figures, 1 table.

Figures (17)

  • Figure 1: Figure 1 $\mid$ Shear motion in WTe2 driven by tip-enhanced terahertz fields.a, Unit cells for the orthorhombic Td phase (blue and black spheres) and monoclinic 1T' phase (red and white spheres). The solid black line highlights the $\approx$4 tilt of the unit cell for 1T' with respect to Td (dashed black line). b, The terahertz-pulse-train incident on the scanning tunnelling microscopy (STM) tip is modulated at $f_\mathrm{THz}$ and the terahertz-pulse-induced contribution to the total tunnel current ($I_\mathrm{STM}$) is isolated with a lock-in amplifier, producing both in-phase ($I_\mathrm{X}$) and out-of-phase ($I_\mathrm{Y}$) components. A steady-state bias ($V_\mathrm{d.c.}$) continuously tunnels electrons at the tip apex, while a terahertz pulse with peak amplitude $E_\mathrm{THz,pk}$ incident on the tip (red curve), drives a phase transition at the tip apex and/or tunnels electrons between the tip and sample. c, Terahertz time-domain spectroscopy (THz-TDS) of the tunnel junctionJelic_atomicTHzTDS_2024 shows resonances at 0.26THz, 0.60THz, 1.46THz and 2.24THz (dashed black lines) in both the spectral amplitude (top, purple points) and phase (orange points). The THz-TDS shown here utilizes a reference waveform acquired on a gold surfaceJelic_atomicTHzTDS_2024 (Extended Data Fig. \ref{['fig:ext-validation']}), $E_\mathrm{Au}(A_\mathrm{Au},\varphi_\mathrm{Au}) = \mathfrak{F}\{ E_\mathrm{Au}(t) \}$, with the same tip apex and incident terahertz alignment as the experiments on WTe2. See Methods for parameters during waveform acquisition. The data is shown as mean values $\pm$ standard deviation of five individual scans. Bottom: schematic of the shear mode associated with a phase transition in the topmost layer of WTe2, occurring at a frequency of 0.26THz (arrow lengths are exaggerated for clarity). d, STM topography scans acquired at $V_\mathrm{d.c.} = \qty{10}{mV}$ and $I_\mathrm{d.c.} = \qty{100}{pA}$ with incident $E_\mathrm{THz,pk}$ at 13V/cm (top), 18V/cm (top middle), 23V/cm (middle), 32V/cm (bottom middle) and 36V/cm (bottom). Colourmap range [5,35] pm; image size $\qty{10}{nm} \times \qty{2}{nm}$; scan speed 4.3nm/s. e, Horizontal cross-sections of the respective topography scans in d (dashed green line). The cross-sections in e are vertically offset for clarity.
  • Figure 1: Extended Data Figure 1 $\mid$ Phonon dispersion of Td-WTe2 calculated using DFT with the hybrid PBE0 functional. Calculated phonon band structure of a two-layer slab along the $\Gamma-$X$-$S$-$Y$-\Gamma$ path. See Extended Data Fig. \ref{['fig:ext-banddiagrams']}a for a schematic of the Brillouin zone.
  • Figure 1: Supplementary Figure 1 $\mid$ Picometre resolution tunnelling microscopy of a terahertz-driven phase transition in WTe2.a, Out-of-phase THz-STM image, $I_\mathrm{Y}(x,y)$, acquired at $V\textsubscript{d.c.}$ = 10 mV, $I\textsubscript{d.c.}$ = 100 pA and $V\textsubscript{THz,pk}$ = $-$1.7 V. Scan size 6 nm $\times$ 8 nm; scan speed 4.3 nm/s. b, Perspective view of $I_\mathrm{Y}(x,y)$ from Fig. \ref{['fig:fig3']}b overlaid onto a 3D texture generated by the simultaneously acquired $I\textsubscript{d.c.}(x,\,y)$, where $I\textsubscript{d.c.}$ spans 100 pA to 220 pA. c, Picometre-scale image from Fig. \ref{['fig:fig3']}d. The colourmap in c spans [$-1,\,+1$] pA. The white box in a shows where b was acquired, while the grey box in b shows where c was acquired.
  • Figure 2: Figure 2 $\mid$ Differential atomic imaging of a terahertz-field-driven phase transition.a, Schematic showing the different interaction regimes of WTe2 within a THz-STM tunnel junction while an optical chopper modulates the incident terahertz-pulse-train (top). Experimental oscilloscope traces are shown for the three interaction regimes. Regime I: $E_\mathrm{THz,pk}$ does not drive any measurable effects as the tip-enhanced terahertz electric field strength lies below the phase transition onset ($E_\mathrm{PT}$). Regime II: $E_\mathrm{THz,pk}$ minimally drives tunnelling but is sufficient to induce a phase transition between Td-WTe2 and 1T'-WTe2, which can be detected via the 90 out-of-phase component of the modulated tunnel current ($I_\mathrm{Y} \neq 0$) when a small d.c. bias is also present. Regime III: terahertz-driven tunnelling becomes dominant, while the differential current, $I_\mathrm{Y}$, between Td-WTe2 and 1T'-WTe2 subsides, since a metastable state emerges as the primary phase at the surface near the tip apex. b, $I_\mathrm{THz}$-$V_\mathrm{THz,pk}$ curve on the WTe2 surface acquired at $V_\mathrm{d.c.} = \qty{-10}{mV}$ and $z = z_0$ with the tip height, $z_0$, set by $V_0 = \qty{10}{mV}$, $I_0 = \qty{100}{pA}$. The solid grey line shows the in-phase component ($I_\mathrm{X}$), while the solid black line shows the out-of-phase component ($I_\mathrm{Y}$). c, THz-STM images of a $\qty{5}{nm} \times \qty{5}{nm}$ area showing both $I_\mathrm{X}(x,y)$ and $I_\mathrm{Y}(x,y)$ for a WTe2 surface defect acquired at $V_\mathrm{d.c.} = \qty{-5.5}{mV}$ (left), $V_\mathrm{d.c.} = \qty{0}{V}$ (middle) and $V_\mathrm{d.c.} = \qty{+5.5}{mV}$ (right). The left and right image pairs were acquired at $I_\mathrm{d.c.} = \qty{100}{pA}$ and $V_\mathrm{THz,pk} = \qty{-3.3}{V}$, while the middle image pair was acquired at $V_\mathrm{THz,pk} = \qty{-2.8}{V}$ and the tip was approached 150 pm to enhance lightwave-driven tunnelling ($z = z_0 - \qty{150}{pm}$). d, Conventional THz-STM rectified current map, $I_\mathrm{X}(x,y)$, of a $\qty{42}{nm} \times \qty{28}{nm}$ area acquired at constant height with $V_\mathrm{d.c.} = \qty{0}{V}$, $V_\mathrm{THz,pk} = \qty{-1.7}{V}$ and $z = z_0 - \qty{50}{pm}$. The tip height $z_0$ was set by $V_\mathrm{d.c.} = \qty{10}{mV}$, $I_\mathrm{d.c.} = \qty{100}{pA}$. e, Out-of-phase THz-STM image, $I_\mathrm{Y}(x,y)$, of the same area acquired at $V_\mathrm{d.c.} = \qty{10}{mV}$, $V_\mathrm{THz,pk} = \qty{-2.2}{V}$ and $I_\mathrm{d.c.} = \qty{100}{pA}$. Insets: Symmetrized 2D Fourier transforms with dimensions $\qty{3}{nm^{-1}} \times \qty{4}{nm^{-1}}$ (non-symmetrized are shown in Supplementary Fig. \ref{['sifig:THzSTMqpi']}). Scan speed $\qty{4.3}{nm/s}$ for c-e. A 100pm full-width-half-maximum (FWHM) 2D Gaussian was convolved with the images in c-e for noise reduction.
  • Figure 2: Extended Data Figure 2 $\mid$ Fourier analysis of WTe2 STM topography under terahertz pulse illumination.a, STM topography acquired at $V_\mathrm{d.c.} = \qty{10}{mV}$ and $I_\mathrm{d.c.} = \qty{100}{pA}$ with $V_\mathrm{THz,pk}$ at 0.7V (left), 1.0V (middle left), 1.3V (middle), 1.7V (middle right) and 2.0V (right). Chopper frequency 477 Hz; image size $\qty{10}{nm} \times \qty{10}{nm}$; scan speed 4.3nm/s. b-d, Symmetrized 2D Fourier transforms ($\qty{8}{nm^{-1}} \times \qty{8}{nm^{-1}}$) of the images in a with light blue (c) and white (d) arrows denoting Fourier peaks where horizontal cross-sections are shown in c (light blue arrow) and d (white arrow). e, Difference image between the right and left 2D Fourier transforms in b.
  • ...and 12 more figures