Experimental measurement of the reappearance of Rabi rotations in semiconductor quantum dots
L. Hanschke, T. K. Bracht, E. Schöll, D. Bauch, E. Berger, P. Kallert, M. Peter, A. J. Garcia, S. F. Covre da Silva, S. Manna, A. Rastelli, S. Schumacher, D. E. Reiter, K. D. Jöns
TL;DR
This work tackles phonon-induced decoherence in resonantly driven solid-state quantum emitters by demonstrating the non-monotonic reappearance of Rabi rotations in a single GaAs quantum dot and linking the effect to the phonon spectral density $J(\omega)$ and the instantaneous Rabi energy $\Omega(t)$. The authors combine a controlled, few-ps pulsed excitation with high-fidelity resonance fluorescence and a numerically exact PT-MPO theory for a two-level system coupled to longitudinal acoustic phonons, achieving quantitative agreement across temperatures and pulse parameters. A key finding is the experimental observation of Rabi reappearance up to large pulse areas, consistent with theory, and extending the understanding of electron-phonon interactions to practical state preparation in solid-state quantum devices. These results have implications for designing robust, high-fidelity quantum-dot photon sources and for generalizing phonon-aware control strategies to other localized solid-state emitters.
Abstract
Phonons in solid-state quantum emitters play a crucial role in their performance as photon sources in quantum technology. For resonant driving, phonons dampen the Rabi oscillations resulting in reduced preparation fidelities. The phonon spectral density, which quantifies the strength of the carrier-phonon interaction, is non-monotonous as a function of energy. As one of the most prominent consequences, this leads to the reappearance of Rabi rotations for increasing pulse power, which was theoretically predicted in Phys. Rev. Lett. 98, 227403 (2007). In this paper we present the experimental demonstration of the reappearance of Rabi rotations.
