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Flat Chern bands and correlated states in spiral magnet ReAg$_2$Cl$_6$

Kejie Bao, Rui Shi, Huan Wang, Jiaxuan Guo, Jing Wang

Abstract

We predict the van der Waals monolayer ReAg$_2$Cl$_6$ hosts isolated flat Chern bands at the Fermi level in its $120^\circ$ antiferromagnetic ground state. Their flatness and nontrivial topology arise from the cooperative effect of coplanar spin order and strong spin-orbit coupling within Re $5d$ orbitals-a mechanism distinct from moiré systems. The spiral spin texture naturally enlarges the unit cell, reducing carrier densities while preserving sizable interaction scales. Many-body calculations show that fractional fillings can support fractional Chern insulator and charge-density wave states. Remarkably, the mechanism is generic to a broad family of Re-based compounds, with both spin configuration and flat band topology tunable by electrical manipulation. Our findings establish Re-based coplanar antiferromagnets as a robust, tunable, and experimentally accessible platform for flat Chern bands and correlated topological phases potentially at elevated temperatures.

Flat Chern bands and correlated states in spiral magnet ReAg$_2$Cl$_6$

Abstract

We predict the van der Waals monolayer ReAgCl hosts isolated flat Chern bands at the Fermi level in its antiferromagnetic ground state. Their flatness and nontrivial topology arise from the cooperative effect of coplanar spin order and strong spin-orbit coupling within Re orbitals-a mechanism distinct from moiré systems. The spiral spin texture naturally enlarges the unit cell, reducing carrier densities while preserving sizable interaction scales. Many-body calculations show that fractional fillings can support fractional Chern insulator and charge-density wave states. Remarkably, the mechanism is generic to a broad family of Re-based compounds, with both spin configuration and flat band topology tunable by electrical manipulation. Our findings establish Re-based coplanar antiferromagnets as a robust, tunable, and experimentally accessible platform for flat Chern bands and correlated topological phases potentially at elevated temperatures.
Paper Structure (2 equations, 4 figures, 2 tables)

This paper contains 2 equations, 4 figures, 2 tables.

Figures (4)

  • Figure 1: (a,b) Atomic structure of monolayer ReAg$_2$Cl$_6$ from top and side views. The Wyckoff positions 1$a$ and 2$d$ are displayed (notation adopted from Bilbao Crystallographic Server bilbao2bilbao3elcoro2017). The original primitive cell and the magnetic $\sqrt{3}\times\sqrt{3}\times1$ supercell are represented as dashed and solid lines, respectively. (c) Brillouin zone (BZ) of the primitive cell and the supercell. (d) Schematic illustration of (100) AFM with 120$^{\circ}$ spin spiral structure. (e) Crystal field splitting and schematic diagram of AFM exchange between Re 5$d$ electrons.
  • Figure 2: Electronic structure and topological properties of monolayer ReAg$_2$Cl$_6$. (a) Band structure and the topological edge states for 120$^{\circ}$ (100) AFM state. Four isolated flat Chern bands are highlighted. (b,c) The distribution of Berry curvature $\mathcal{B}(\mathbf{k})$ and $\text{Tr}[g(\mathbf{k})]$ in the BZ for three $\mathcal{C}=-1$ Chern bands in (a), respectively. $\mathcal{B}(\mathbf{k})$ remains the same sign throughout the whole BZ for VB and the third CB, while their sign is not always negative for the second CB.
  • Figure 3: Low energy many-body spectra from ED and PES for $1/3$-filled (a,b) 1$^{\rm{st}}$ VB; (c,d) 2$^{\rm{nd}}$ CB; (e,f) 3$^{\rm{rd}}$ CB. ED with $N_{\text{uc}}=24$ and $27$. Insets of ED show the corresponding locations of nearly degenerate ground states of two cluster sizes (marked by blue circles and red crosses) in the BZ. PES with $N_{\text{uc}}=24$ and $N_{A} = 3$ for the three degenerate ground states in (a,c,e). Here we only show the lowest energy per momentum sectors in addition to the degenerate ground state.
  • Figure 4: SOT switching of topology. (a) Schematic of the experimental setup. A spin current $\boldsymbol{\sigma}$, generated via the spin Hall effect of the applied charge current $\bm{I}$ in the substrate, flows parallel to the monolayer and perpendicular to the magnetic easy plane. The resulting damping-like SOT effective fields $\bm{H}_{\text{DL}}$ act on the sublattice moments within the magnetic easy plane. (b) Illustration of the SOT-driven rotation of sublattice moments in the 120$^{\circ}$$(100)$ spiral AFM. (c,d) Evolution of the Chern number of VB and the first CB during the spin rotation. The arrows correspond to the spin configurations shown in Fig. \ref{['fig1']}(d).