Analysis of quasi-planar defects using the Thomas--Fermi--von Weizsäcker model
Dharamveer Kumar, Amuthan A. Ramabathiran
TL;DR
This work analyzes quasi-planar defects in crystals within the Thomas–Fermi–von Weizsäcker (TFW) density-functional framework, proving that the relative energy between a defective crystal and a perfect crystal is finite and governed by a well-posed variational principle. By leveraging thermodynamic-limit theory and locality estimates, the authors show convergence of the electron density and electrostatic potential in the defect setting, with perturbations decaying exponentially away from the defect core. A key outcome is the identification of a surface-energy functional whose minimizer is the defect response, yielding a rigorous variational formulation for defect energies and a controlled path to computing generalized stacking fault energies. The paper also includes numerical exploration of the TFWD (Dirac exchange) model, indicating that the locality properties extend beyond convex TFW, and discusses implications for numerical methods and future extensions to dislocation cores and more complex DFT models.
Abstract
We analyze the convergence of the electron density and relative energy with respect to a perfect crystal of a class of volume defects that are compactly contained along one direction while being of infinite extent along the other two using the Thomas--Fermi--von Weizsäcker (TFW) model. We take advantage of prior work on the thermodynamic limit and stability estimates in the TFW setting, and specialize it to the case of quasi-planar defects. In particular, we prove that the relative energy of the defective crystal with respect to a perfect crystal is finite, and in fact conforms to a well-posed minimization problem. In order to show the existence of the minimization problem, we modify the TFW theory for thin films and establish convergence of the electronic fields due to the perturbation caused by the quasi-planar defect. We also show that perturbations to both the density and electrostatic potential due to the presence of the quasi-planar defect decay exponentially away from the defect, in agreement with the known locality property of the TFW model. We use these results to infer bounds on the generalized stacking fault energy, in particular the finiteness of this energy, and discuss its implications for numerical calculations. We conclude with a brief presentation of numerical results on the (non-convex) Thomas-Fermi-von Weizsäcker-Dirac (TFWD) model that includes the Dirac exchange in the universal functional, and discuss its implications for future work.
