Nonlinear Noise Mechanisms in Active Devices: Additive Amplitude Noise and Phase Noise
Meysam Bahmanian
TL;DR
This work tackles how nonlinear device mechanisms generate additive AM and PM noise and introduces a systematic mathematical framework that maps noise through a linear path and nonlinear AM/PM paths with transfer functions $H_{AM}$ and $H_{PM}$. It develops explicit AM/PM transfer expressions for nonlinear RC circuits with conductance and/or capacitance nonlinearity and applies the theory to a bipolar transistor using curve-tracer extracted parameters, validating the results against simulations. The contributions include a general device model, closed-form transfer functions for representative nonlinear elements, and a practical procedure to extract nonlinear coefficients for transistor noise analysis, enabling design insights to reduce phase noise in RF systems. The framework provides concrete methods to optimize device biasing and circuit topology to minimize PM and improve timing precision in communications and sensing systems.
Abstract
In this report, we lay the foundation for amplitude noise and phase noise analysis in nonlinear devices. We build a theoretical framework that helps us to analyze extremely difficult problems which include both nonlinearity and noise of semiconductors. Using our proposed framework, we analytically calculate the amplitude noise and phase noise of nonlinear RC circuits in the presence of nonlinear capacitance and conductance. As a more practical example, we analyze the amplitude noise and phase noise of a common-emitter stage bipolar transistor.
