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Nonlinear Noise Mechanisms in Active Devices: Additive Amplitude Noise and Phase Noise

Meysam Bahmanian

TL;DR

This work tackles how nonlinear device mechanisms generate additive AM and PM noise and introduces a systematic mathematical framework that maps noise through a linear path and nonlinear AM/PM paths with transfer functions $H_{AM}$ and $H_{PM}$. It develops explicit AM/PM transfer expressions for nonlinear RC circuits with conductance and/or capacitance nonlinearity and applies the theory to a bipolar transistor using curve-tracer extracted parameters, validating the results against simulations. The contributions include a general device model, closed-form transfer functions for representative nonlinear elements, and a practical procedure to extract nonlinear coefficients for transistor noise analysis, enabling design insights to reduce phase noise in RF systems. The framework provides concrete methods to optimize device biasing and circuit topology to minimize PM and improve timing precision in communications and sensing systems.

Abstract

In this report, we lay the foundation for amplitude noise and phase noise analysis in nonlinear devices. We build a theoretical framework that helps us to analyze extremely difficult problems which include both nonlinearity and noise of semiconductors. Using our proposed framework, we analytically calculate the amplitude noise and phase noise of nonlinear RC circuits in the presence of nonlinear capacitance and conductance. As a more practical example, we analyze the amplitude noise and phase noise of a common-emitter stage bipolar transistor.

Nonlinear Noise Mechanisms in Active Devices: Additive Amplitude Noise and Phase Noise

TL;DR

This work tackles how nonlinear device mechanisms generate additive AM and PM noise and introduces a systematic mathematical framework that maps noise through a linear path and nonlinear AM/PM paths with transfer functions and . It develops explicit AM/PM transfer expressions for nonlinear RC circuits with conductance and/or capacitance nonlinearity and applies the theory to a bipolar transistor using curve-tracer extracted parameters, validating the results against simulations. The contributions include a general device model, closed-form transfer functions for representative nonlinear elements, and a practical procedure to extract nonlinear coefficients for transistor noise analysis, enabling design insights to reduce phase noise in RF systems. The framework provides concrete methods to optimize device biasing and circuit topology to minimize PM and improve timing precision in communications and sensing systems.

Abstract

In this report, we lay the foundation for amplitude noise and phase noise analysis in nonlinear devices. We build a theoretical framework that helps us to analyze extremely difficult problems which include both nonlinearity and noise of semiconductors. Using our proposed framework, we analytically calculate the amplitude noise and phase noise of nonlinear RC circuits in the presence of nonlinear capacitance and conductance. As a more practical example, we analyze the amplitude noise and phase noise of a common-emitter stage bipolar transistor.
Paper Structure (18 sections, 107 equations, 15 figures, 2 tables)

This paper contains 18 sections, 107 equations, 15 figures, 2 tables.

Figures (15)

  • Figure 1: Model of active device incorporating AM and PM noise mechanisms.
  • Figure 2: Sinusoidal stimulation of (a) nonlinear conductance and (b) nonlinear transconductance in presence of noise.
  • Figure 3: Sinusoidal stimulation of (a) nonlinear conductance in parallel with capacitance and (b) nonlinear capacitance in parallel with conductance in presence of noise.
  • Figure 4: Output spectrum of a nonlinear circuit showing both in-phase and quadrature noise.
  • Figure 5: Nonlinear RC circuit with a nonlinear conductance.
  • ...and 10 more figures