A Recipe for Charge Density Prediction
Xiang Fu, Andrew Rosen, Kyle Bystrom, Rui Wang, Albert Musaelian, Boris Kozinsky, Tess Smidt, Tommi Jaakkola
TL;DR
This paper tackles accelerating charge-density prediction to speed up DFT workflows by bypassing expensive Kohn–Sham SCF iterations. It introduces a three-ingredient recipe: (i) an atomic plus virtual orbital charge-density representation using an even-tempered Gaussian basis with trainable exponents, (ii) a high-capacity SE(3)-equivariant backbone (eSCN) that predicts basis coefficients and per-basis scaling, and (iii) a carefully staged training procedure including fine-tuning of exponents. On the QM9 charge-density benchmark, the method achieves state-of-the-art accuracy (best NMAE around $0.178$) and substantial efficiency gains (up to $125.29$ mol/min and up to $171\times$ speedups relative to prior SOTA), illustrating a favorable accuracy–throughput Pareto. The results demonstrate strong potential to accelerate DFT-based materials and molecular discovery by providing accurate, scalable charge-density predictions and useful descriptors for downstream properties.
Abstract
In density functional theory, charge density is the core attribute of atomic systems from which all chemical properties can be derived. Machine learning methods are promising in significantly accelerating charge density prediction, yet existing approaches either lack accuracy or scalability. We propose a recipe that can achieve both. In particular, we identify three key ingredients: (1) representing the charge density with atomic and virtual orbitals (spherical fields centered at atom/virtual coordinates); (2) using expressive and learnable orbital basis sets (basis function for the spherical fields); and (3) using high-capacity equivariant neural network architecture. Our method achieves state-of-the-art accuracy while being more than an order of magnitude faster than existing methods. Furthermore, our method enables flexible efficiency-accuracy trade-offs by adjusting the model/basis sizes.
