Optical and transport properties of NbN thin films revisited
Samuel Kern, Pavol Neilinger, Magdaléna Poláčková, Martin Baránek, Tomáš Plecenik, Tomáš Roch, Miroslav Grajcar
TL;DR
This work shows that quantum corrections to conductivity are essential to correctly describe the optical response of highly disordered NbN thin films. By extending the Drude-Lorentz model with a quantum-corrected conduction term and a Lorentzian inter-band component, the authors obtain a consistent set of electronic parameters that agree with transport measurements and ab initio calculations, including $\hbar\Gamma \approx 1.8~\mathrm{eV}$, $v_F \approx 0.7\times10^6~\mathrm{m\,s^{-1}}$, and $N(E_F)=2$ states/(eV·f.u.). The model explains the observed anti-Drude peak and the double ENZ behavior, and reconciles discrepancies between optical and transport studies, highlighting the significance of quantum corrections in disordered NbN. The findings reinforce the link between optical properties, diffusion, and electronic structure in NbN and provide a framework for consistent interpretation across experimental probes and theory.
Abstract
Highly disordered NbN thin films exhibit promising superconducting and optical properties. Despite extensive study, discrepancies in its basic electronic properties persist. Analysis of the optical conductivity of disordered ultra-thin NbN films, obtained from spectroscopic ellipsometry by standard Drude-Lorentz model, provides inconsistent parameters. We argue that this discrepancy arise from neglecting the presence of quantum corrections to conductivity in the IR range. To resolve this matter, we propose a modification to the Drude-Lorentz model, incorporating quantum corrections. The parameters obtained from the modified model are consistent not only with transport and superconducting measurements but also with ab initio calculations. The revisited values describing conduction electrons, which differ significantly from commonly adopted ones, are the electron relaxation rate $Γ\approx1.8~\textrm{eV}/\hbar$, the Fermi velocity $v_F \approx 0.7 \times 10^{6}~\textrm{ms}^{-1}$ and the electron density of states $N(E_F)=2~$states of both spins/eV/$V_{\textrm{f.u.}}$.
