A general formula of frequency and amplitude for shaking induced Mott insulator in atomtronic transistors
Wenxi Lai, Yu-Quan Ma, Yi-Wen Wei
Abstract
Mott insulator of atomic transport can be realized in driven optical lattices by choosing particular ratio of driving frequency and amplitude, which has been studied as Floquet engineering with time-independent effective Hamiltonian approach. Here, we give a general formula of frequency-amplitude radio for realization of the driving induced insulator-conductor transition in a double-well open system, using numerical computation with instantaneous eigenstates approach. The result is owing to the fact that the instantaneous eigenstates approach is applicable in more wide parameter range compared with the time-independent effective Hamiltonian approach. Analysis from the results of quantum master equation shows that the insulator effect is originated from coherent localization of atom wave packets in optical wells.
