An Energy-efficient Capacitive-RRAM Content Addressable Memory
Yihan Pan, Adrian Wheeldon, Mohammed Mughal, Shady Agwa, Themis Prodromakis, Alexantrou Serb
TL;DR
The paper tackles the high energy cost of traditional CAMs by introducing a capacitive-divider based 3T1R1C TCAM that performs content-addressable search in the charge domain, thereby eliminating DC paths. It combines an in-house modeled RRAM (Au/TiO2/Pt) with a bottom capacitor to create a tunable capacitive divider that modulates the match-line during search, enabling energy-efficient parallel operation in a 64×64 array at 875 MHz in 0.18 µm technology. Key contributions include a complete circuit-level design of the CAM cell, a data-driven RRAM model, an integrated system with CAR/AAR/WRT support, and measured energy and timing metrics (e.g., 1.71 fJ/bit-search for matches and 4.69 fJ/bit-search for misses). The work demonstrates substantial energy savings relative to DC-path CAMs and highlights practical considerations for scaling, PVT variation, and peripheral energy, pointing to viable campus- and data-center-level deployments of energy-efficient in-memory associative memory.
Abstract
Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS solutions. This article introduced an energy-efficient 3T1R1C TCAM cooperating with capacitor dividers and RRAM devices. The RRAM as a storage element also acts as a switch to the capacitor divider while searching for content. CAM cells benefit from working parallel in an array structure. We implemented a 64 x 64 array and digital controllers to perform with an internal built-in clock frequency of 875MHz. Both data searches and reads take three clock cycles. Its worst average energy for data match is reported to be 1.71fJ/bit-search and the worst average energy for data miss is found at 4.69fJ/bit-search. The prototype is simulated and fabricated in 0.18um technology with in-lab RRAM post-processing. Such memory explores the charge domain searching mechanism and can be applied to data centers that are power-hungry.
