Effect of the depolarizing field on the domain structure of an improper ferroelectric
Aaron Merlin Müller, Amadé Bortis, Arkadiy Simonov, Manfred Fiebig, Thomas Lottermoser
TL;DR
This work investigates whether the depolarizing field from bound surface charges can modify domain patterns in improper ferroelectrics with topological defects. Using phase-field simulations of hexagonal manganite thin films, the authors include an electrostatic term $F_{electrostatic} = -P_s E$ and apply Gauss-law–based field calculations under open boundaries to resolve the depolarizing field. They find that the depolarizing field lowers the average polarization, induces polarization decay away from domain walls, and reshapes the domain-size distribution, yielding ring-like Fourier intensities and a narrower pair-correlation peak, while promoting strong wall alignment along the polarization axis. The results demonstrate that depolarizing fields cannot be neglected in thin-film improper ferroelectrics and suggest electrostatic control as a route for domain-pattern engineering complementary to strain effects.
Abstract
We show that, contrary to common belief, the depolarizing electric field generated by bound charges at thin-film surfaces can have a substantial impact on the domain structure of an improper ferroelectric with topological defects. In hexagonal-manganite thin films, we observe in phase-field simulations that through the action of the depolarizing field, (i) the average magnitude of the polarization decreases, (ii) the local magnitude of the polarization decreases with increasing distance from the domain walls, and (iii) there is a significant alteration of the domain-size distribution and average domain size, which is visualized with the pair-correlation function. We conclude that, in general, it is not appropriate to ignore the effects of the depolarizing field for thin film ferroelectrics.
