Engineering 2D material exciton lineshape with graphene/h-BN encapsulation
Steffi Y. Woo, Fuhui Shao, Ashish Arora, Robert Schneider, Nianjheng Wu, Andrew J. Mayne, Ching-Hwa Ho, Mauro Och, Cecilia Mattevi, Antoine Reserbat-Plantey, Alvaro Moreno, Hanan Herzig Sheinfux, Kenji Watanabe, Takashi Taniguchi, Steffen Michaelis de Vasconcellos, Frank H. L. Koppens, Zhichuan Niu, Odile Stéphan, Mathieu Kociak, F. Javier García de Abajo, Rudolf Bratschitsch, Andrea Konečná, Luiz H. G. Tizei
TL;DR
The study addresses shaping optical excitations in atomically thin TMDs by engineering near-field coupling in van der Waals heterostructures with graphene/graphite and h-BN. It reports Fano-like asymmetric exciton lineshapes at the lowest excitons $X_A$ and $X_B$ for WS$_2$, MoSe$_2$, and WSe$_2$ when interfaced with graphene/graphite, and symmetric Lorentzian lineshapes for h-BN encapsulation; in WSe$_2$/graphene, trion emission is suppressed with a neutral exciton redshift of $44\, ext{meV}$ and a binding-energy reduction of $30\, ext{meV}$. A retardation-aware 2D optical-conductivity model explains the lineshapes as electromagnetic coupling to the surrounding conductive environment, predicting that the asymmetry grows with the substrate’s imaginary dielectric contribution $\text{Im}\{\epsilon_{\text{sub}}\}t_{\text{sub}}$ and can be captured by modified Fano parameters $(q,a)$. The results demonstrate a route to tailor narrow optical modes and exciton energies in vdWHs, enabling new nanophotonic device functionalities through precise stacking and thickness control.
Abstract
Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical doping, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.
