INTPIX4NA -- new integration-type silicon-on-insulator pixel detector for imaging application

TL;DR

INTPIX4NA addresses the need for high-spatial-resolution, fast X-ray imaging to enable cos α residual-stress measurements. The device is a $832×512$ pixel integration-type SOIPIX detector with a pixel size of $17×17 μm^2$ over a $14.1×8.7$ mm$^2$ sensitive area, arranged in 13 blocks with parallel readout on SEABAS2. Tests at KEK yield an MTF exceeding $29.4$ cycles/mm Nyquist with $MTF>50\%$ in both directions, and energy resolutions of $35.3$–$46.2\%$ at $5.415$ keV, $21.7$–$35.6\%$ at $8$ keV, and $15.7$–$19.4\%$ at $12$ keV, with signals separable from noise at room temperature. The results indicate the detector meets air/room-temperature requirements for residual-stress measurements and are complemented by plans to raise frame rates beyond $153$ fps, implement temperature control, apply gain-correction methods, and tile multiple chips to expand the active area.

Abstract

INTPIX4NA is an integration-type silicon-on-insulator pixel detector. This detector has a 14.1 x 8.7 mm^2 sensitive area, 425,984 (832 column x 512 row matrix) pixels and the pixel size is 17 x 17 um^2. This detector was developed for residual stress measurement using X-rays (the cos alpha method). The performance of INTPIX4NA was tested with the synchrotron beamlines of the Photon Factory (KEK), and the following results were obtained. The modulation transfer function, the index of the spatial resolution, was more than 50% at the Nyquist frequency (29.4 cycle/mm). The energy resolution analyzed from the collected charge counts is 35.3%--46.2% at 5.415 keV, 21.7%--35.6% at 8 keV, and 15.7%--19.4% at 12 keV. The X-ray signal can be separated from the noise even at a low energy of 5.415 keV at room temperature (approximately 25--27 degree Celsius). The maximum frame rate at which the signal quality can be maintained is 153 fps in the current measurement system. These results satisfy the required performance in the air and at room temperature (approximately 25--27 degree Celsius) condition that is assumed for the environment of the residual stress measurement.

Figures (19)

• Figure 1: Structure of SOIPIX detector.
• Figure 2: Schematic of the relation between the residual stress and the Debye ring deformation.
• Figure 3: INTPIX4NA In-Pixel circuit schematic.
• Figure 4: INTPIX4NA whole pixel array and peripheral schematic.
• Figure 5: INTPIX4NA and SEABAS2 connection schematic.