Universal Scaling of Electron Transmission for Nearly Ballistic and Quantum Dragon Nanodevices
M. A. Novotny, Tomáš Novotný
TL;DR
This work addresses how electron transmission in nearly ballistic and quantum-dragon nanodevices scales under small uncorrelated disorder. Using tight-binding models and NEGF, it shows that two universal scaling regimes govern the disorder-averaged transmission ${\cal T}_{\rm ave}(E)$: a very small-$\delta$ regime with ${1-\cal T}_{\rm ave}(E) \propto \delta^2$ dependent on device geometry and energy, and a DOS-driven regime for larger $\delta$ that incorporates a DOS-dependent factor ${\Upsilon}$ and a scale length $L_{\rm scale}$. The DOS enters the second regime via a scaling relation validated across 2D hexagonal, rectangular, and square-octagonal quantum dragons, confirming robust transport behavior near ideal unit transmission ${\cal T}(E)=1$. The results illuminate how order amidst disorder can persist in higher-dimensional systems, with implications for nearly perfect nanoelectronic devices and potential routes to quantum information processing and cloaking. The framework connects universal perturbative scaling, Fano resonances, and DOS-based scaling into a cohesive picture of transport in complex quantum nanosystems.
Abstract
We predict two different universal scaling regimes for the quantum transmission of metallic nanodevices following the addition of a small amount of uncorrelated disorder. A nanodevice is connected to two thin semi-infinite uniform leads, and the Non-Equilibrium Green's Function (NEGF) methodology yields the electron transmission ${\cal T}(E)$ as a function of the injected electron energy $E$. Ballistic nanodevices have no disorder and have ${\cal T}(E)=1$ for all $E$ that allow electron propagation in the leads. Quantum dragon nanodevices can have extremely strong properly correlated disorder, and still have ${\cal T}(E)=1$ for all $E$. Additional uncorrelated site disorder leads to Fano resonances in ${\cal T}(E)$. Averaging over the uncorrelated disorder we predict using perturbation theory two universal scaling regimes for ${\cal T}_{\rm ave}(E)$. The functional form of both universal scaling regimes depend on the device length and width, energy, and variance of the uncorrelated disorder. The second scaling regime, valid for small but somewhat larger uncorrelated disorder than the first scaling regime, also has the form dependent on the density of states of the system. These two scaling regimes are demonstrated to be valid via large scale computer calculations.
