Neutral and charged excitons interplay in non-uniformly strain-engineered WS$_2$
Sviatoslav Kovalchuk, Moshe G. Harats, Guillermo López-Polín, Jan N. Kirchhof, Katja Höflich, Kirill I. Bolotin
TL;DR
This work demonstrates a scalable method to impart non-uniform mechanical strain to WS2 monolayers by suspending the film over holes and pressurizing with inert gas, producing large strain gradients that can be mapped optically and validated with FEM. Spatially resolved PL reveals not only the expected band-gap redshift under strain but also a pronounced neutral-to-trion conversion driven by carrier funneling toward the highest-strain region, with triangular geometries enhancing the effect due to steeper non-uniformity. The findings provide a practical non-uniform strain engineering knob for tuning excitonic physics in 2D semiconductors and offer insights into potential pseudomagnetic-field phenomena, with implications for nanoscale optoelectronics and fundamental studies of carrier dynamics in strained TMDCs.
Abstract
We investigate the response of excitons in two-dimensional semiconductors subjected to controlled non-uniform strain fields. In our approach to non-uniform strain-engineering, a WS$_2$ monolayer is suspended over a triangular hole. Large ($>2\;\%$), strongly non-uniform ($>0.28\;\%/μm$), and in-situ tunable strain is induced in the monolayer by pressurizing it with inert gas. We observe peak shifts and spectral shape changes in the photoluminescence spectra of strained WS$_2$. We interpret these changes as a signature of increased free electron density and resulting conversion of neutral excitons to trions in the region of high strain. Our result establishes non-uniform strain engineering as a novel and useful experimental `knob' for tuning optoelectronic properties of 2D semiconductors.
